NTHS5402T1 datasheet(2/8 Pages) ONSEMI

Part #	NTHS5402T1

Description	Power MOSFET N?묬hannel ChipFET-TM

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Manufacturer	ONSEMI [ON Semiconductor]

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NTHS5402T1

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Typ

Max

Unit

Maximum Junction−to−Ambient (Note 2.)

t v 5 sec

Steady State

RthJA

40

80

50

95

°C/W

Maximum Junction−to−Foot (Drain)

Steady State

RthJF

15

20

°C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1.0

−

V

Gate−Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

−

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 24 V, VGS = 0 V

−

1.0

µA

VDS = 24 V, VGS = 0 V,

TJ = 85°C

−

5.0

On−State Drain Current (Note 3.)

ID(on)

VDS w 5.0 V, VGS = 10 V

20

−

A

Drain−Source On−State Resistance (Note 3.)

rDS(on)

VGS = 10 V, ID = 4.9 A

−

0.030

0.035

Ω

()

VGS = 4.5 V, ID = 3.9 A

−

0.045

0.055

Forward Transconductance (Note 3.)

gfs

VDS = 10 V, ID = 4.9 A

−

15

−

S

Diode Forward Voltage (Note 3.)

VSD

IS = 1.1 A, VGS = 0 V

−

0.8

1.2

V

Dynamic (Note 4.)

Total Gate Charge

Qg

V

15 V V

10 V

−

13

20

nC

Gate−Source Charge

Qgs

VDS = 15 V, VGS = 10 V,

ID = 4.9 A

−

1.3

−

Gate−Drain Charge

Qgd

ID = 4.9 A

−

3.1

−

Turn−On Delay Time

td(on)

−

10

15

ns

Rise Time

tr

VDD = 15 V, RL = 15 Ω

ID ^ 10 A VGEN = 10 V

−

10

15

Turn−Off Delay Time

td(off)

ID ^ 1.0 A, VGEN = 10 V,

RG = 6 Ω

−

25

40

Fall Time

tf

RG 6 Ω

−

10

15

Source−Drain Reverse Recovery Time

trr

IF = 1.1 A, di/dt = 100 A/µs

−

30

60

2. Surface Mounted on 1″ x 1″ FR4 Board.

3. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%.

4. Guaranteed by design, not subject to production testing.

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