PMWD26UN datasheet(2/12 Pages) PHILIPS

Part #	PMWD26UN

Description	Dual N-channel uTrenchMOS ultra low level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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2 / 12 page

9397 750 14982

Product data sheet

Rev. 02 — 19 May 2005

2 of 12

Philips Semiconductors

PMWD26UN

Dual N-channel

µTrenchMOS ultra low level FET

3.

Ordering information

4.

Limiting values

[1]

Single device conducting.

Table 2:

Ordering information

Type number

Package

Name

Description

Version

PMWD26UN

TSSOP8

plastic thin shrink small outline package; 8 leads; body width 4.4 mm

SOT530-1

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage (DC)

25

°C ≤ T

j ≤ 150 °C

-

20

V

VDGR

drain-gate voltage (DC)

25

°C ≤ T

j ≤ 150 °C; RGS =20kΩ

-20

V

VGS

gate-source voltage

-

±10

V

ID

drain current (DC)

Tsp =25 °C; VGS = 4.5 V; Figure 2 and 3

[1] -

7.8

A

Tsp = 100 °C; VGS = 4.5 V; Figure 2

[1] -

4.7

A

IDM

peak drain current

Tsp =25 °C; pulsed; tp ≤ 10 µs; Figure 3

[1] -

31.3

A

Ptot

total power dissipation

Tsp =25 °C; Figure 1

[1] -

3.1

W

Tstg

storage temperature

−55

+150

°C

Tj

junction temperature

−55

+150

°C

Source-drain diode

IS

source (diode forward) current (DC)

Tsp =25 °C

-

2.6

A

ISM

peak source (diode forward) current Tsp =25 °C; pulsed; tp ≤ 10 µs

-

10.3

A

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