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MBR60H100CT Datasheet(PDF) 2 Page - ON Semiconductor |
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MBR60H100CT Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page MBR60H100CT http://onsemi.com 2 MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (Rated VR) TC = 133°C IF(AV) 30 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 125°C IFRM 60 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 350 A Operating Junction Temperature (Note 1) TJ +175 °C Storage Temperature Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ ms Controlled Avalanche Energy (see test conditions in Figures 10 and 11) WAVAL 400 mJ ESD Ratings: Machine Model = C Human Body Model = 3B > 400 > 8000 V THERMAL CHARACTERISTICS Maximum Thermal Resistance − Junction−to−Case − Junction−to−Ambient RqJC RqJA 1.0 70 °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 2) (IF = 30 A, TC = 25°C) (IF = 30 A, TC = 125°C) (IF = 60 A, TC = 25°C) (IF = 60 A, TC = 125°C) vF 0.84 0.72 0.98 0.84 V Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 125°C) (Rated DC Voltage, TC = 25°C) iR 10 0.01 mA Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. |
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