MBR60H100CT datasheet(2/6 Pages) ONSEMI

Part #	MBR60H100CT

Description	SWITCHMODE Power Rectifier 100 V, 60 A

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Manufacturer	ONSEMI [ON Semiconductor]

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MBR60H100CT

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MAXIMUM RATINGS (Per Diode Leg)

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

100

V

Average Rectified Forward Current

(Rated VR) TC = 133°C

IF(AV)

30

A

Peak Repetitive Forward Current

(Rated VR, Square Wave, 20 kHz) TC = 125°C

IFRM

60

A

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

IFSM

350

A

Operating Junction Temperature (Note 1)

TJ

+175

°C

Storage Temperature

Tstg

*65 to +175

°C

Voltage Rate of Change (Rated VR)

dv/dt

10,000

V/

ms

Controlled Avalanche Energy (see test conditions in Figures 10 and 11)

WAVAL

400

mJ

ESD Ratings:

Machine Model = C

Human Body Model = 3B

> 400

> 8000

V

THERMAL CHARACTERISTICS

Maximum Thermal Resistance − Junction−to−Case

− Junction−to−Ambient

RqJC

RqJA

1.0

70

°C/W

ELECTRICAL CHARACTERISTICS (Per Diode Leg)

Maximum Instantaneous Forward Voltage (Note 2)

(IF = 30 A, TC = 25°C)

(IF = 30 A, TC = 125°C)

(IF = 60 A, TC = 25°C)

(IF = 60 A, TC = 125°C)

vF

0.84

0.72

0.98

0.84

V

Maximum Instantaneous Reverse Current (Note 2)

(Rated DC Voltage, TC = 125°C)

(Rated DC Voltage, TC = 25°C)

iR

10

0.01

mA

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

2. Pulse Test: Pulse Width = 300

ms, Duty Cycle ≤ 2.0%.

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