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AO6602L Datasheet(PDF) 4 Page - Alpha & Omega Semiconductors |
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AO6602L Datasheet(HTML) 4 Page - Alpha & Omega Semiconductors |
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4 / 7 page  AO6602 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) 0 2 4 6 8 10 01 23 45 67 Qg (nC) Figure 7: Gate-Charge Characteristics 0 100 200 300 400 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Ciss 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to- Ambient (Note E) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Coss Crss 0.1 1.0 10.0 100.0 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100 µs 10ms 1ms 0.1s 1s 10s DC RDS(ON) limited TJ(Max)=150°C TA=25°C VDS=15V ID=3.1A Single Pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W Ton T PD In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse TJ(Max)=150°C TA=25°C 10 µs Alpha and Omega Semiconductor, Ltd. |
Similar Part No. - AO6602L |
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Similar Description - AO6602L |
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