AS4LC256K16E0-45JC datasheet(7/25 Pages) ALSC

Part #	AS4LC256K16E0-45JC

Description	3.3V 256K X 16 CMOS DRAM (EDO)

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Manufacturer	ALSC [Alliance Semiconductor Corporation]

Direct Link	https://www.alliancememory.com

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AS4LC256K16EO

4/11/01; V.1.1

Alliance Semiconductor

P. 7 of 25

EDO page mode cycle

Refresh cycle

Output enable

Self refresh cycle

Std

Symbol

Parameter

-35

-45

-60

Unit

Notes

Min

Max

Min

Max

Min

Max

tPC

Read or write cycle time (fast page)

15

–

17

–

25

–

ns

14

tCAP

Access time from CAS precharge

–

19

–

21

–

23

ns

13

tCP

CAS precharge time (fast page)

4

–

5

–

6

–

ns

tPCM

EDO page mode RMW cycle

56

–

58

–

60

–

ns

tCRW

Page mode CAS pulse width (RMW)

44

–

46

–

50

–

ns

tRASP

RAS pulse width

35

75K

45

75K

60

75K

ns

Std

Symbol

Parameter

-35

-45

-60

Unit

Notes

Min

Max

Min

Max

Min

Max

tCSR

CAS setup time (CAS-before-RAS)

10

–

10

–

10

–

ns

3

tCHR

CAS hold time (CAS-before-RAS)8

–

8

–

10

–

ns

3

tRPC

RAS precharge to CAS hold time

0

–

0

–

0

–

ns

tCPT

CAS precharge time

(CAS-before-RAS counter test)

8–

8

–

8

–

ns

Std

Symbol

Parameter

-35

-45

-60

Unit

Notes

Min

Max

Min

Max

Min

Max

tROH

RAS hold time referenced to OE

5–

5

–

5

–

ns

tOEA

OE access time

–

10

–

10

–

10

ns

tOED

OE to data delay

5

–

5

–

8

–

ns

tOEZ

Output buffer turnoff delay from OE

–8

–

8

–

8

ns

8

tOEH

OE command hold time

8

–

8

–

8

–

ns

Std Symbol Parameter

-35

-45

-60

Unit

Notes

Min

Max

Min

Max

Min

Max

tRASS

RAS pulse width

(CBR self refresh)

100K

–

100K

–

100K

–

ns

tRPS

RAS precharge time

(CBR self refresh)

85

–

85

–

85

–

ns

tCHS

CAS hold time

(CBR self refresh)

30

–

30

–

30

–

ns

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AS4LC256K16E0-45JC Datasheet(PDF) 7 Page - Alliance Semiconductor Corporation

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