XP03316 datasheet(2/5 Pages) PANASONIC

Part #	XP03316

Description	Silicon NPN epitaxial planar type

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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XP03316

2

SJJ00281AED

• Tr2

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

■ Electrical Characteristics T

a = 25°C ± 3°C

• Tr1

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Common characteristics chart

PT  Ta

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

VCBO

IC = 10 µA, IE = 050

V

Collector-emitter voltage (Base open)

VCEO

IC

= 2 mA, I

B

= 050

V

Collector-base cutoff current (Emitter open)

ICBO

VCB = 50 V, IE = 0

0.1

µA

Collector-emitter cutoff current (Base open)

ICEO

VCE = 50 V, IB = 0

0.5

µA

Emitter-base cutoff current (Collector open)

IEBO

VEB

= 6 V, I

C

= 0

0.01

mA

Forward current transfer ratio

hFE

VCE = 10 V, IC = 5 mA

160

460



Collector-emitter saturation voltage

VCE(sat)

IC = 10 mA, IB = 0.3 mA

0.25

V

Output voltage high-level

VOH

VCC

= 5 V, V

B

= 0.5 V, R

L

= 1 kΩ

4.9

V

Output voltage low-level

VOL

VCC = 5 V, VB = 2.5 V, RL = 1 kΩ

0.2

V

Input resistance

R1

−30%

4.7

+30%

k

Ω

Transition frequency

fT

VCB

= 10 V, I

E

= −2 mA, f = 200 MHz

150

MHz

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

VCBO

IC = −10 µA, IE = 0

−50

V

Collector-emitter voltage (Base open)

VCEO

IC

= −2 mA, I

B

= 0

−50

V

Collector-base cutoff current (Emitter open)

ICBO

VCB = −50 V, IE = 0

− 0.1

µA

Collector-emitter cutoff current (Base open)

ICEO

VCE = −50 V, IB = 0

− 0.5

µA

Emitter-base cutoff current (Collector open)

IEBO

VEB = −6 V, IC = 0

− 0.01

mA

Forward current transfer ratio

hFE

VCE

= −10 V, I

C

= −5 mA

160

460



Collector-emitter saturation voltage

VCE(sat)

IC = −10 mA, IB = − 0.3 mA

− 0.25

V

Output voltage high-level

VOH

VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ−4.9

V

Output voltage low-level

VOL

VCC

= −5 V, V

B

= −2.5 V, R

L

= 1 kΩ− 0.2

V

Input resistance

R1

−30%

4.7

+30%

k

Ω

Transition frequency

fT

VCB = −10 V, IE = 1 mA, f = 200 MHz

80

MHz

0

160

40

120

80

0

250

100

200

50

150

Ambient temperature

T

a (°C)

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