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R1WV3216RSD-8SW Datasheet(PDF) 9 Page - Renesas Technology Corp

Part # R1WV3216RSD-8SW
Description  32Mb superSRAM (2M wordx16bit)
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R1WV3216RSD-8SW Datasheet(HTML) 9 Page - Renesas Technology Corp

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R1W V3216R Series
Rev.1.00
2004.4.13
page 9 of 16
Write Cycle
1,2
ns
30
0
25
0
tWHZ
Write to output in high-Z
Write pulse width
1,2
ns
30
0
25
0
tOHZ
Output disable to output in high-Z
2
ns
-
5
-
5
tOW
Output active from end of write
ns
-
0
-
0
tDH
Data hold from write time
ns
-
40
-
35
tDW
Data to write time overlap
7
ns
-
0
-
0
tWR
Write recovery time
6
ns
-
0
-
0
tAS
Address setup time
ns
-
70
-
65
tBW
LB#,UB# valid to end of write
4
ns
-
60
-
55
tWP
5
ns
-
70
-
65
tCW
Chip selection to end of write
ns
-
70
-
65
tAW
Address valid to end of write
ns
-
85
-
70
tWC
Write cycle time
Max.
Min.
Max.
Min.
Notes
Unit
R1WV3216R**-8S
R1WV3216R**-7S
Symbol
Parameter
Note
1.
tCHZ, tOHZ, tWHZ and tBHZ are defined as the time at which the outputs achieve the open circuit conditions
and are not referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
3. AT any given temperature and voltage condition,
tHZ max is less than tLZ min both for a given device and
form device to device.
4. A write occurs during the overlap of a low CS1#, a high CS2, a low WE# and a low LB# or a low UB#.
A write begins at the latest transition among CS1# going low, CS2 going high, WE# going low and LB#
going low or UB# going low .
A write ends at the earliest transition among CS1# going high, CS2 going low, WE# going high and LB#
going high or UB# going high.
tWP is measured from the beginning of write to the end of write.
5.
tCW is measured from the later of CS1# going low or CS2 going high to end of write.
6.
tAS is measured the address valid to the beginning of write.
7.
tWR is measured from the earliest of CS1# or WE# going high or CS2 going low to the end of write cycle.


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