SSM6N03FE datasheet(3/5 Pages) TOSHIBA

Part #	SSM6N03FE

Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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3 / 5 page

SSM6N03FE

2001-11-14

3

(Q1, Q2 Common)

Drain-source voltage VDS (V)

ID – VDS

Drain-source voltage VDS (V)

ID – VDS(Low voltage region)

Drain-source voltage VDS (V)

IDR – VDS

Gate-source voltage VGS (V)

ID – VGS

Drain current ID (mA)

ïYfsï – ID

Drain-source voltage VDS (V)

C – VDS

Common Source

VDS = 3 V

Ta

= 25°C

5

1

300

100

3

5

10

30

50

10

30

50

100

Common Source

VGS = 0

f

= 1 MHz

Ta

= 25°C

100

1

0.1

30

Ciss

Coss

Crss

0.3

1

3

10

3

5

10

30

50

Common Source

VDS = 3 V

1000

0.01

0

3

-25°C

25°C

Ta

= 100°C

0.5

1

1.5

2

2.5

0.1

1

10

100

0

Common Source

Ta

= 25°C

1.8

4.0

VGS = 1.4 V

1.6

2.2

2.0

2.5

20

40

60

80

0.2

0.4

0.6

0.8

1.0

0

Common Source

Ta

= 25°C

1.8

1.9

VGS = 1.4 V

100

1.6

1.7

2.0

2.5

2

4

6

8

10

20

40

60

80

0.01

0

100

-1.2

-1.0

-0.8

-0.6

-0.4

-0.2

0.1

1

10

Common Source

VGS = 0

Ta

= 25°C

IDR

D

G

S

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SSM6N03FE Datasheet(PDF) 3 Page - Toshiba Semiconductor

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