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AS4C14400 Datasheet(PDF) 4 Page - Alliance Semiconductor Corporation

Part # AS4C14400
Description  1M-bit 횞 4 CMOS DRAM (Fast page mode or EDO)
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C14400 Datasheet(HTML) 4 Page - Alliance Semiconductor Corporation

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®
AS4C14400
4
AC parameters common to all waveforms
Shaded areas contain advance information.
Read cycle
Shaded areas contain advance information.
Symbol
Parameter
-40
-50
-60
-70
Unit
Notes
Min
Max
Min
Max
Min
Max
Min
Max
tRC
Random read or write cycle time
70
90
–110
130
ns
tRP
RAS precharge time
20
30
–40
50
ns
tRAS
RAS pulse width
40
10K
50
10K
60
10K
70
10K
ns
tCAS
CAS pulse width
10
13
–15
18
ns
tRCD
RAS to CAS delay time
18
30
20
37
20
45
20
52
ns
6
tRAD
RAS to column address delay time
13
20
15
25
15
30
15
35
ns
7
tRSH(R)
CAS to RAS hold time (read)
10
13
–15
18
ns
tCSH
RAS to CAS hold time
40
50
–60
70
ns
tCRP
CAS to RAS precharge time
0
0
–0
–0–
ns
tASR
Row address setup time
0
0
–0
–0–
ns
tRAH
Row address hold time
8
10
–10
10
ns
tT
Transition time (rise and fall)
2
50
2
50
2
50
2
50
ns
4,5
tREF
Refresh period
16
16
16
16
ms
3
tCLZ
CAS to output in low Z
0
0
–0
–0–
ns
8
Symbol
Parameter
-40
-50
-60
-70
Unit
Notes
Min
Max
Min
Max
Min
Max
Min
Max
tRAC
Access time from RAS
40
50
60
70
ns
6
tCAC
Access time from CAS
10
13
15
18
ns
6,13
tAA
Access time from address
20
25
30
35
ns
7,13
tAR(R)
Column add hold from RAS
30
40
–45–55
ns
tRCS
Read command setup time
0
0
–0–0–
ns
tRCH
Read command hold time to CAS
0
0
–0–0–
ns
9
tRRH
Read command hold time to RAS
0
0
–0–0–
ns
9
tRAL
Column address to RAS lead time
20
25
–30–35
ns
tCPN
CAS precharge time
5
10
–10–10
ns
tODS
Output disable setup time
0
0
–0–0–
ns
tOFF
Output buffer turn-off time
0
10
0
13
0
15
0
18
ns
8,10


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