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SPA-1318 Datasheet(PDF) 1 Page - Stanford Microdevices

Part # SPA-1318
Description  2150 MHz 1 Watt Power Amplifier with Active Bias
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Manufacturer  STANFORD [Stanford Microdevices]
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SPA-1318 Datasheet(HTML) 1 Page - Stanford Microdevices

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The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
1
Product Description
Preliminary
EDS-101429 Rev B
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
726 Palomar Ave., Sunnyvale, CA 94085
SPA-1318
2150 MHz 1 Watt Power Amplifier
with Active Bias
Product Features
On-chip Active Bias Control
Power Control Allows Power Consumption
Reduction
Patented High Reliability GaAsHBT Technology
High Linearity Performance: +48dBm OIP3 Typ.
Surface-Mountable Plastic Package
Applications
W-CDMA Systems
Multi-Carrier Applications
Stanford Microdevices’ SPA-1318 is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) amplifier housed in
a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver
amplifier for infrastructure equipment in the 2150 MHz PCS
band. Its high linearity makes it an ideal choice for multi-carrier
and digital applications.
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Match


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