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AN5308NK Datasheet(PDF) 9 Page - Panasonic Semiconductor |
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AN5308NK Datasheet(HTML) 9 Page - Panasonic Semiconductor |
9 / 25 page ICs for TV AN5308NK 9 Parameter Symbol Conditions Min Typ Max Unit Horizontal signal processing (continued) F.B.P slice level (blanking) VFBP−1 0.7 V F.B.P slice level (AFC1) VFBP−2 2.5 V F.B.P delay time range TH−FBP H-center: typ. From HOUT rising 19 µs edge to FBP center B.G.P start position From H. sync. rear edge to burst 0.3 µs gate pulse front edge Sandcastle pulse output temperature ∆V 60(Ta) 1.8 mV/deg characteristics Sandcastle pulse input threshold ∆V 59(Ta) 0 mV/deg level temperature characteristics F.B.P input threshold level ∆V 61(Ta) −1.8 mV/deg temperature characteristics (HBLK) F.B.P input threshold level 1 mV/deg temperature characteristics (AFC1) X-ray inside reference temperature Zener temperature characteristics: 0 mV/deg characteristics +1.8 mV/deg Sandcastle pulse output vs. supply VCC2: 5 V ± 0.5 V 1 V/V voltage dependence (BGP) Sandcastle pulse output vs. supply VCC2: 5 V ± 0.5 V 0.74 V/V voltage (HBLK) Sandcastle pulse output vs. supply VCC2: 5 V ± 0.5 V 0.44 V/V voltage (VBLK) Hold down operation voltage VHTH VREF (= pin 6) = 6.2 V 2.71 2.81 2.91 V Vertical signal processing Vertical BLK phase (wide) PVBLK(W) Period from VBLK rising edge to 3.87 ms vertical sync. falling edge Vertical BLK phase (normal) PVBLK Period from VBLK rising edge to 0.2 ms vertical sync. falling edge Neck break operation pin 60 voltage V60 Pin 6: 1.5 V 1.5 V Vertical BLK pulse width (wide) TVBLK(W) 5.05 ms Y-signal processing Contrast variable range AyG(CON)min Contrast: min. 40 dB Y-output amplitude VCC dependence ∆y G(VCC) 0.4 dB/V Y-output DC voltage VCC dependence ∆yG(V CC) 0.18 V/V Y-noise level VYNL 750 mV Delay line dynamic range VDLmax 0.7 V s Electrical Characteristics at Ta = 25°C (continued) • Design reference data (continued) Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed. |
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