© 2000 IXYS All rights reserved

1 - 1

V

RSM

V

RRM

Types

V

V

800

800

VUO 100-08NO7

1200

1200

VUO 100-12NO7

1400

1400

VUO 100-14NO7

1600

1600

VUO 100-16NO7

Symbol

Test Conditions

Maximum Ratings

I

dAV

x

T

100

A

I

FSM

T

t = 10 ms (50 Hz), sine

1000

A

V

t = 8.3 ms (60 Hz), sine

1100

A

T

t = 10 ms (50 Hz), sine

700

A

V

t = 8.3 ms (60 Hz), sine

750

A

T

t = 10 ms (50 Hz), sine

5000

V

t = 8.3 ms (60 Hz), sine

5020

T

t = 10 ms (50 Hz), sine

2450

V

t = 8.3 ms (60 Hz), sine

2330

T

VJ

-40...+150

°C

T

VJM

150

°C

T

stg

-40...+125

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

t = 1 s

3000

V~

M

d

Mounting torque (M5)

5 ± 15 %

Nm

(10-32 UNF)

44 ± 15 %

lb.in.

Weight

typ.

110

g

I

dAV

= 100 A

V

Symbol

Test Conditions

Characteristic Values

I

R

V

R

= V

£

0.5

mA

V

R

= V

£

10

mA

V

F

I

F

= 150 A;

T

£

1.4

V

V

T0

For power-loss calculations only

0.8

V

r

T

5m

W

R

thJC

per diode; DC current

1.12

K/W

per module

0.28

K/W

R

thJH

per diode, DC current

1.5

K/W

per module

0.375

K/W

d

S

Creeping distance on surface

16.1

mm

d

A

Creepage distance in air

7.5

mm

a

Max. allowable acceleration

50

Features

• Package with copper base plate

• Isolation voltage 3000 V~

• Planar passivated chips

• Low forward voltage drop

• ¼" fast-on power terminals

Applications

• Supplies for DC power equipment

• Input rectifiers for PWM inverter

• Battery DC power supplies

• Field supply for DC motors

Advantages

• Easy to mount with two screws

• Space and weight savings

• Improved temperature and power

cycling capability

• Small and light weight

Dimensions in mm (1 mm = 0.0394")

Preliminary data

Data according to IEC 60747 refer to a single diode unless otherwise stated

x for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions.

VUO 100

Three Phase

Rectifier Bridge

C

D

E

B

A