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IDT71V3578SA133BQ Datasheet(PDF) 11 Page - Integrated Device Technology |
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IDT71V3578SA133BQ Datasheet(HTML) 11 Page - Integrated Device Technology |
11 / 22 page 6.42 IDT71V3576, IDT71V3578, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with 3.3V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges 11 Linear Burst Sequence Table (LBO=VSS) Synchronous Write Function Truth Table(1, 2) Asynchronous Truth Table(1) Interleaved Burst Sequence Table (LBO=VDD) NOTES: 1. L = VIL, H = VIH, X = Don’t Care. 2. BW3 and BW4 are not applicable for the IDT71V3578. 3. Multiple bytes may be selected during the same cycle. NOTES: 1. L = VIL, H = VIH, X = Don’t Care. 2. Synchronous function pins must be biased appropriately to satisfy operation requirements. NOTE: 1. Upon completion of the Burst sequence the counter wraps around to its initial state. NOTE: 1. Upon completion of the Burst sequence the counter wraps around to its initial state. Operation GW BWE BW1 BW2 BW3 BW4 Read H H X XXX Read H L HHHH Write all Bytes L XX XXX Write all Bytes H LLLLL Write Byte 1 (3) H L L HHH Write Byte 2 (3) HL H L H H Write Byte 3 (3) HL H H L H Write Byte 4 (3) H L HHH L 5279 tbl 12 Sequence 1 Sequence 2 Sequence 3 Sequence 4 A1 A0 A1 A0 A1 A0 A1 A0 First Address 0 0 0 1 1 0 1 1 Second Address 0 1 1 0 1 1 0 0 Third Address 1 0 1 1 0 0 0 1 Fourth Address (1) 11 00 0 1 1 0 5279 tbl 15 Sequence 1 Sequence 2 Sequence 3 Sequence 4 A1 A0 A1 A0 A1 A0 A1 A0 First Address 0 0 0 1 1 0 1 1 Second Address 0 1 0 0 1 1 1 0 Third Address 1 0 1 1 0 0 0 1 Fourth Address (1) 11 1 0 0 1 0 0 5279 tbl 14 Operation (2) OE ZZ I/O Status Power Read L L Data Out Active Read H L High-Z Active Write X L High-Z – Data In Active Deselected X L High-Z Standby Sleep Mode X H High-Z Sleep 5279 tbl 13 |
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