K6F2016R4G-F datasheet(7/10 Pages) SAMSUNG

Part #	K6F2016R4G-F

Description	2Mb(128K x 16 bit) Low Power SRAM

Download	10 Pages

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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7 / 10 page

Revision 0.0

CMOS SRAM

April 2005

K6F2016R4G Family

- 7 -

Preliminary

Address

Data Out

Previous Data Valid

Data Valid

TIMING DIAGRAMS

TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH, UB or/and LB=VIL)

TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)

Data Valid

High-Z

tRC

CS

Address

UB, LB

OE

Data out

tAA

tRC

tOH

tAA

tCO

tBA

tOE

tOLZ

tBLZ

tLZ

tOHZ

tBHZ

tHZ

NOTES (READ CYCLE)

1.

tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage

levels.

2. At any given temperature and voltage condition,

tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device

interconnection.

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K6F2016R4G-F Datasheet(PDF) 7 Page - Samsung semiconductor

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