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HY57V641620ELTP-6 Datasheet(PDF) 11 Page - Hynix Semiconductor

Part # HY57V641620ELTP-6
Description  64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

HY57V641620ELTP-6 Datasheet(HTML) 11 Page - Hynix Semiconductor

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Rev. 1.5 / Feb. 2005
11
Synchronous DRAM Memory 64Mbit (4Mx16bit)
HY57V641620E(L/S)T(P) Series
AC CHARACTERISTICS II (AC operating conditions unless otherwise noted)
Note: 1. A new command can be given tRRC after self refresh exit.
Parameter
Symbol
5
6
7
H
Unit Note
Min Max Min
Max Min Max Min Max
RAS Cycle Time
Operation
tRC
55
-
60
-
63
-
63
-
ns
RAS Cycle Time
Auto Refresh tRRC
55
-
60
-
63
-
63
-
ns
RAS to CAS Delay
tRCD
15
-
18
-
20
-
20
-
ns
RAS Active Time
tRAS
38.7 100K
42
100K
42
100K
42
120K
ns
RAS Precharge Time
tRP
15
-
18
-
20
-
20
-
ns
RAS to RAS Bank Active Delay
tRRD
10
-
12
-
14
-
15
-
ns
CAS to CAS Delay
tCCD
1
-
1
-
1
-
1
-
CLK
Write Command to Data-In De-
lay
tWTL
0
-0
-0
-
0
-
CLK
Data-in to Precharge Command tDPL
2
-
2
-
2
-
2
-
CLK
Data-In to Active Command
tDAL
tDPL + tRP
DQM to Data-Out Hi-Z
tDQZ
2
-
2
-
2
-
2
-
CLK
DQM to Data-In Mask
tDQM
0
-
0
-
0
-
0
-
CLK
MRS to New Command
tMRD
2
-2-2-
2
-
CLK
Precharge to Data
Output High-Z
CL = 3
tPROZ3
3
-
3
-
3
-
3
-
CLK
CL = 2
tPROZ2
2
-
2
-
2
-
2
-
CLK
Power Down Exit Time
tDPE
1
-
1
-
1
-
1
-
CLK
Self Refresh Exit Time
tSRE
1
-
1
-
1
-
1
-
CLK
1
Refresh Time
tREF
-64-64
-64
-
64
ms


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