2

Gain at 40 GHz

Notes:

2. Channel-to-backside Thermal Resistance (

Notes:

4. 100% on-wafer RF test is done at frequency = 38, 40, and 42 GHz. Statistics based on 1500 part sample

5. Specifications are derived from measurements in a 50

Ω test environment. Aspects of the amplifier performance may be improved over a more

narrow bandwidth by application of additional conjugate, linearity, or power matching.

Ω

P-1dB at 40 GHz

P-1dB at 42 GHz

Typical distribution of Small Signal Gain and Output Power @P-1dB. Based on 1500 part sampled

over several production lots.

Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

Drain Supply Current

(under any RF power drive and temperature)

mA

950

1050

Gate Supply Operating Voltage

V

-0.85

-0.7

-0.65

θ

ch-b

°C/W

6.4

Symbol

Parameters and Test Conditions

Units

Minimum

Typical

Maximum

Sigma

Gain

dB

12

14

0.5

Output Power at 1dB Gain Compression

dBm

26

28

0.39

Output Power at 3dB Gain Compression

dBm

28.5

0.36

OIP3

Third Order Intercept Point;

∆f=100MHz; Pin=-20dBm

dBm

38

0.86

RLin

dB

-16

0.70

RLout

dB

-18

0.71

Isolation

Min. Reverse Isolation

dB

-47

3.00

LSL

12

12.5

13

13.5

14

14.5

15

LSL

26

27

28

29

LSL

27

28