Switching Diodes

1

Publication date: May 2002

SKF00049AED

Silicon epitaxial planar type

For switching circuits

s Features

• Small S-mini type 4-pin package

• Two isolated elements contained in one package, allowing high-

density mounting

• Flat lead type, resulting in improved mounting efficiency and

solderability with the high-speed mounting machine

• Short reverse recovery time t

rr

• Small terminal capacitance, C

t

s Absolute Maximum Ratings T

Unit: mm

Parameter

Symbol

Rating

Unit

Reverse voltage (DC)

80

V

Peak reverse voltage

80

V

Average forward

Single

100

mA

current

Double

75

Peak forward

Single

225

mA

current

Double

170

Non-repetitive peak

Single

500

mA

Double

375

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Internal Connection

Note) *: t = 1 s

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

0.1

µA

Forward voltage (DC)

0.95

1.2

V

Reverse voltage (DC)

V

Terminal capacitance

0.9

2

pF

3

ns

s Electrical Characteristics T

Note) 1. Rated input/output frequency: 100 MHz

4

3

1

2

Marking Symbol: M1B

Bias Application Unit N-50BU

90%

Pulse Generator

(PG-10N)

R

W.F.Analyzer

(SAS-8130)

R

t

t

δ = 0.05

I

V

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

V

R

I

F

t

t

A

Note) The part number in the parenthesis shows conventional part number.

1: Anode 1

3: Cathode 2

2: Anode 2

4: Cathode 1

EIAJ: SC-82

SMini4-F1 Package

1.3

±0.1

2.1

±0.1

0.3

±0.05

0.7

±0.1

0.16

+0.1

–0.06

43

12

5˚