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PE4243-EK Datasheet(PDF) 1 Page - Peregrine Semiconductor Corp. |
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PE4243-EK Datasheet(HTML) 1 Page - Peregrine Semiconductor Corp. |
1 / 8 page Page 1 of 8 Document No. 70-0096-02 │ www.psemi.com ©2005 Peregrine Semiconductor Corp. All rights reserved. 6-lead SOT-23 Parameter Conditions Minimum Typical Maximum Units Operation Frequency1 DC 3000 MHz Insertion Loss 1000 MHz 2000 MHz 0.7 0.9 0.85 1.05 dB dB Isolation 1000 MHz 2000 MHz 28 19 30 21 dB dB Return Loss 1000 MHz 2000 MHz 18 16 22 19 dB dB ‘ON’ Switching Time 50% CTRL to 0.1 dB of final value, 1 GHz 300 ns ‘OFF’ Switching Time 50% CTRL to 25 dB isolation, 1 GHz 200 ns Video Feedthrough2 15 mVpp Input 1 dB Compression 2000 MHz 26 27 dBm Input IP3 2000 MHz, 14 dBm input power 43 45 dBm RFC RF1 RF2 CMOS Control Driver CTRL CTRL or V DD The PE4243 UltraCMOS™ RF Switch is designed to cover a broad range of applications from near DC through 3000 MHz. This reflective switch integrates on-board CMOS control logic with a low voltage CMOS-compatible control interface, and can be controlled using either single-pin or complementary control inputs. Using a nominal +3-volt power supply voltage, a typical input 1 dB compression point of +27 dBm can be achieved. The PE4243 UltraCMOS™ RF Switch is manufactured in Peregrine’s patented Ultra Thin Silicon (UTSi®) CMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. Product Specification SPDT UltraCMOS™ RF Switch Product Description Figure 1. Functional Diagram Figure 2. Package Type PE4243 Features • Single-pin or complementary CMOS logic control inputs • +3.0-volt power supply needed for single-pin control mode • Low insertion loss: 0.7 dB at 1000 MHz, 0.9 dB at 2000 MHz • Isolation of 30 dB at 1000 MHz, 21 dB at 2000 MHz • Typical 1 dB compression point of +27 dBm • Ultra-small SOT-23 package Notes: 1. Device linearity will begin to degrade below 10 MHz. 2. The DC transient at the output of any port of the switch when the control voltage is switched from Low to High or High to Low in a 50 Ω test set-up, measured with 1ns risetime pulses and 500 MHz bandwidth. Table 1. Electrical Specifications @ +25 °C, VDD = 3 V (ZS = ZL = 50 Ω) |
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