ZXMN10A08DN8

SEMICO NDUC TORS

ISSUE 4 - JANUARY 2005

2

PARAMETER

SYMBOL

VALUE

UNIT

Junction to ambient (a)

100

°C/W

Junction to ambient (b)

69

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at t 5 secs.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to

Transient Thermal Impedance graph

THERMAL RESISTANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

100

V

Gate source voltage

20

V

(b)

(b)

(a)

2.1

1.7

1.6

A

Pulsed drain current

(c)

9A

Continuous source current (body diode)

(b)

2.6

A

Pulsed source current (body diode)

(c)

9A

(a)

Linear derating factor

1.25

10

W

mW/°C

(b)

Linear derating factor

1.8

14.5

W

mW/°C

Operating and storage temperature range

-55 to +150

°C

ABSOLUTE MAXIMUM RATINGS