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ZXMN10A08DN8TC Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZXMN10A08DN8TC Datasheet(HTML) 2 Page - Zetex Semiconductors |
2 / 7 page ZXMN10A08DN8 SEMICO NDUC TORS ISSUE 4 - JANUARY 2005 2 PARAMETER SYMBOL VALUE UNIT Junction to ambient (a) RθJA 100 °C/W Junction to ambient (b) RθJA 69 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDSS 100 V Gate source voltage VGS 20 V Continuous drain current VGS=10V; TA=25°C (b) VGS=10V; TA=70°C (b) VGS=10V; TA=25°C (a) ID 2.1 1.7 1.6 A Pulsed drain current (c) IDM 9A Continuous source current (body diode) (b) IS 2.6 A Pulsed source current (body diode) (c) ISM 9A Power dissipation at TA=25°C (a) Linear derating factor PD 1.25 10 W mW/°C Power dissipation at TA=25°C (b) Linear derating factor PD 1.8 14.5 W mW/°C Operating and storage temperature range Tj:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS |
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