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1 - 2

Phaseleg Configuration

Dual Power

V

DSS

= 900 V

I

D25

= 85 A

R

W

VMM 90-09F

MOSFET T1 + T2

Symbol

Conditions

Maximum Ratings

V

DSS

T

900

V

V

GS

±20

V

I

D25

T

85

A

I

D80

T

65

A

I

F25

(diode) T

85

A

I

F80

(diode) T

65

A

Symbol

Conditions

Characteristic Values

(T

min.

typ.

max.

R

DSon

V

76

m

W

V

GSth

V

3

5

V

I

DSS

V

25°C

0.4

mA

T

1.5

mA

I

GSS

V

1

µA

Q

g

960

nC

Q

gs

225

nC

Q

gd

430

nC

t

d(on)

150

ns

t

r

180

ns

t

d(off)

330

ns

t

f

140

ns

V

F

(diode) I

1.1

1.6

V

t

rr

(diode) I

250

ns

R

thJC

0.08 K/W

R

thJS

with heat transfer paste

0.12

K/W

Features

– low R

DSon

– unclamped inductive switching

(UIS)

capability

– dv/dt ruggedness

– fast intrinsic reverse diode

– low gate charge

• thermistor

for internal temperature measurement

• package

– low inductive current path

– screw connection to high current

main terminals

– use of non interchangeable

connectors for auxiliary terminals

possible

– Kelvin source terminals for easy drive

– isolated DCB ceramic base plate

Applications

• converters with high power density

and high switching speed for

– power supplies

– induction heating

V

V

I

Advanced Technical Information

IXYS reserves the right to change limits, test conditions and dimensions.