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AP09N70P Datasheet(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP09N70P Datasheet(HTML) 1 Page - Advanced Power Electronics Corp. |
1 / 6 page Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ ▼ ▼ ▼ Dynamic dv/dt Rating BVDSS 600/675V ▼ ▼ ▼ ▼ Repetitive Avalanche Rated RDS(ON) 0.75Ω ▼ ▼ ▼ ▼ Fast Switching ID 9A ▼ ▼ ▼ ▼ Simple Drive Requirement Description Absolute Maximum Ratings Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current 1 A PD@TC=25℃ Total Power Dissipation W W/℃ EAS Single Pulse Avalanche Energy 2 mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy mJ TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 0.8 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W Data & specifications subject to change without notice AP09N70P/R Rating 600/675 9 40 156 9 5 305 1.25 -55 to 150 Parameter 200218032 Parameter Linear Derating Factor - /A 9 Storage Temperature Range -55 to 150 AP09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.Both TO-220 and TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. The TO-220 and TO-262 package is universally preferred for all commercial- industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. G D S ± 30 G D S TO-262(R) G D S TO-220(P) G D S |
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