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UN4122 Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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UN4122 Datasheet(HTML) 2 Page - Panasonic Semiconductor |
2 / 7 page UNR412x Series 2 SJH00019BED Parameter Symbol Conditions Min Typ Max Unit Forward current UNR4121 hFE VCE = −10 V, IC = −100 mA 40 transfer ratio UNR4122/412Y 50 UNR4123/4124 60 UNR412X 20 Collector-emitter saturation voltage VCE(sat) IC = −100 mA, IB = −5 mA − 0.25 V UNR412X IC = −10 mA, I B = − 0.3 mA − 0.25 UNR412Y IC = −50 mA, IB = −5 mA − 0.15 Output voltage high-level VOH VCC = −5 V, VB = − 0.5 V, RL = 500 Ω−4.9 V Output voltage low-level VOL VCC = −5 V, V B = −3.5 V, R L = 500 Ω− 0.2 V Transition frequency fT VCB = −10 V, IE = 50 mA, f = 200 MHz 200 MHz Input resistance UNR4121/4124 R1 −30% 2.2 +30% k Ω UNR4122 4.7 UNR4123 10 UNR412X 0.27 UNR412Y 3.1 Resistance ratio R1/R2 0.8 1.0 1.2 UNR4124 0.17 0.22 0.27 UNR412X 0.043 0.054 0.065 UNR412Y 0.67 ■ Electrical Characteristics (continued) T a = 25°C ± 3°C Common characteristics chart PT Ta 0 0 160 40 120 80 100 300 200 400 Ambient temperature T a (°C) Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. |
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