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KM62V256CLTG-10L Datasheet(PDF) 6 Page - Samsung semiconductor |
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KM62V256CLTG-10L Datasheet(HTML) 6 Page - Samsung semiconductor |
6 / 12 page ELECTRONICS KM62V256C, KM62U256C Family CMOS SRAM Revision 04 April 1996 - 6 - KM62V256CL-L KM62U256CL-L KM62V256CLE-L KM62U256CLE-L KM62V256CLI-L KM62U256CLI-L Vcc 3.0/2.7V* 2.2V /CS GND /CS¡ Ã Vcc-0.2V Vdr tSDR tRDR Data retention mode DATA RETENTION TIMING DIAGRAM Vcc for data retention Data retention current Data retention set-up time Recovery time DATA RETENTION CHARACTERISTICS Vdr Idr tSDR tRDR /CS¡ ÃVcc-0.2V Vcc=3.0V /CS¡ ÃVcc-0.2V See data retention waveform Typ** - 1 0.6 1 0.6 1 0.6 - - Unit V uA ms Min 2.0 - - - - - - 0 5 Max 3.6 8 8 10 10 10 10 - - * 1) Commercial Product : Ta=0 to 70 °C, unless otherwise specified 2) Extended Product : Ta=-25 to 85 °C, unless otherwise specified 3) Industrial Product : Ta=-40 to 85 °C, unless otherwise specified ** Ta=25 °C Item Symbol Test Condition* * 3.0V for KM62V256C family, 2.7V for KM62U256C family FUNCTIONAL DESCRIPTION /WE X H H L Mode Power Down Output Disable Read Write Current Mode Isb, Isb1 Icc Icc Icc I/O Pin High-Z High-Z Dout Din /OE X H L X /CS H L L L |
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Similar Description - KM62V256CLTG-10L |
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