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TLWW9600 Datasheet(PDF) 3 Page - Vishay Siliconix |
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TLWW9600 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 6 page VISHAY TLWW9600 Document Number 83202 Rev. A3, 22-Apr-03 Vishay Semiconductors www.vishay.com 3 Typical Characteristics (T amb = 25 °C unless otherwise specified) Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature for InGaN Figure 3. Rel. Luminous Intensity vs. Angular Displacement for 60 ° emission angle 0 25 50 75 100 125 150 175 200 225 250 Tamb - Ambient Temperature (°C) 16066 RthJA = 200 K/W 080 20 40 60 100 120 0 10 20 30 40 50 60 16067 Tamb - Ambient Temperature ( °C) 080 20 40 60 100 120 RthJA = 200 K/W 16006 0.4 0.2 0 0.2 0.4 0.6 0.6 0.9 0° 30° 10° 20° 40° 50° 60° 70° 80° 1.0 0.8 0.7 Figure 4. Percentage Total Luminous Flux vs. Total Included Angle for 60 ° emission angle Figure 5. Thermal Resistance Junction Ambient vs. Cathode Padsize Figure 6. Forward Current vs. Forward Voltage 0 10 20 30 40 50 60 70 80 90 100 0 25 50 75 100 125 Total Included Angle (Degrees) 16005 160 170 180 190 200 210 220 230 0 50 100 150 200 250 300 Cathode Padsize in mm2 16009 Padsize 8 mm 2 per Anode Pin 0 10 20 30 40 50 60 70 80 90 100 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VF - Forward Voltage ( V ) 16062 White |
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