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HFA80NC40CSL Datasheet(PDF) 1 Page - International Rectifier |
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HFA80NC40CSL Datasheet(HTML) 1 Page - International Rectifier |
1 / 5 page PD -2.472 rev. B 01/99 • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters Features Description HEXFRED TM diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. Ultrafast, Soft Recovery Diode HEXFRED TM HFA80NC40CSL SLD -61-8 VR = 400V VF(typ.) = 1V IF(AV) = 80A Qrr (typ.) = 200nC IRRM(typ.) = 6A trr(typ.) = 30ns di(rec)M/dt (typ.) = 190A/µs Absolute Maximum Ratings (per Leg) Note: Limited by junction temperature L = 100µH, duty cycle limited by max TJ 125°C Thermal - Mechanical Characteristics Parameter Min. Typ. Max. Units RthJC Junction-to-Case, Single Leg Conducting –––– –––– 0.85 Junction-to-Case, Both Legs Conducting –––– –––– 0.42 Wt Weight –––– 4.3 (0.15) –––– g (oz) °C/W K/W W Parameter Max. Units V R Cathode-to-Anode Voltage 400 V IF @ TC = 25°C Continuous Forward Current 85 IF @ TC = 100°C Continuous Forward Current 42 A IFSM Single Pulse Forward Current 300 EAS Non-Repetitive Avalanche Energy 1.4 mJ PD @ TC = 25°C Maximum Power Dissipation 150 PD @ TC = 100°C Maximum Power Dissipation 59 TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) -55 to +150 °C 1 |
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