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HFA80NC40CSL Datasheet(PDF) 1 Page - International Rectifier

Part # HFA80NC40CSL
Description  Ultrafast, Soft Recovery Diode
Download  5 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

HFA80NC40CSL Datasheet(HTML) 1 Page - International Rectifier

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PD -2.472 rev. B 01/99
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of
Recovery Parameters
Features
Description
HEXFRED
TM diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are ideally
suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
Ultrafast, Soft Recovery Diode
HEXFRED
TM
HFA80NC40CSL
SLD -61-8
VR = 400V
VF(typ.)ƒ = 1V
IF(AV) = 80A
Qrr (typ.) = 200nC
IRRM(typ.) = 6A
trr(typ.) = 30ns
di(rec)M/dt (typ.)ƒ = 190A/µs
Absolute Maximum Ratings (per Leg)
Note:
 Limited by junction temperature
‚ L = 100µH, duty cycle limited by max TJ
ƒ 125°C
Thermal - Mechanical Characteristics
Parameter
Min.
Typ.
Max.
Units
RthJC
Junction-to-Case, Single Leg Conducting
––––
––––
0.85
Junction-to-Case, Both Legs Conducting
––––
––––
0.42
Wt
Weight
––––
4.3 (0.15)
––––
g (oz)
°C/W
K/W
W
Parameter
Max.
Units
V R
Cathode-to-Anode Voltage
400
V
IF @ TC = 25°C
Continuous Forward Current
85
IF @ TC = 100°C
Continuous Forward Current
42
A
IFSM
Single Pulse Forward Current

300
EAS
Non-Repetitive Avalanche Energy
‚
1.4
mJ
PD @ TC = 25°C
Maximum Power Dissipation
150
PD @ TC = 100°C
Maximum Power Dissipation
59
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
-55 to +150
°C
1


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