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HFA08PB120S Datasheet(PDF) 1 Page - International Rectifier |
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HFA08PB120S Datasheet(HTML) 1 Page - International Rectifier |
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1 / 6 page  Parameter Max. Units VR Cathode-to-Anode Voltage 1200 V IF @ TC = 25°C Continuous Forward Current IF @ TC = 100°C Continuous Forward Current 8.0 IFSM Single Pulse Forward Current 130 IFRM Maximum Repetitive Forward Current 32 IAS Maximum Single Pulse Avalanche Current 8.0 PD @ TC = 25°C Maximum Power Dissipation 73.5 PD @ TC = 100°C Maximum Power Dissipation 29 TJ Operating Junction and TSTG Storage Temperature Range PD -2.365A Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count Features Description International Rectifier's HFA08PB120 is a state of the art center tap ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 8 amps continuous current, the HFA08PB120 is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA08PB120 is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. Ultrafast, Soft Recovery Diode HEXFREDTM HFA08PB120 Absolute Maximum Ratings -55 to +150 W A °C 5/12/97 VR = 1200V VF(typ.)* = 2.4V IF(AV) = 8.0A Qrr (typ.)= 140nC IRRM(typ.) = 4.5A trr(typ.) = 28ns di(rec)M/dt (typ.)* = 85A/µs * 125°C TO-247AC (Modified) |
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