INF8574 datasheet(9/10 Pages) INTEGRAL

Part #	INF8574

Description	silicon CMOS circuit

Download	10 Pages

Scroll/Zoom	100%

Manufacturer	INTEGRAL [Integral Corp.]

Direct Link	http://www.iksemi.com/

Logo

9 / 10 page

INF8574

9

LIMITING VALUES

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

VDD

supply voltage

-0.5

+7.0

V

VI

input voltage

VSS - 0.5

VDD + 0.5

V

II

DC input current

-

±20

mA

IO

DC output current

-

±25

mA

IDD

supply current

-

±100

mA

ISS

supply current

-

±100

mA

Ptot

total power dissipation

-

400

mW

PO

power dissipation per output

-

100

mW

Tstg

storage temperature

65

+150

oC

Tamb

operating ambient temperature

40

+85

oC

DC CHARACTERISTICS VDD = 2.5 to 6 V; VSS = 0 V; Tamb =40 to +85

oC; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Supply

VDD

supply voltage

2.5

6.0

V

IDD

supply current

operating mode; VDD = 6 V;

no load; VI = VDD or VSS

;

fSCL = 100 kHz

40

100

µA

Istb

standby current

standby mode; VDD = 6 V;

no load; VI = VDD or VSS

2.5

10

µA

VPOR

power-on reset voltage

VDD = 6 V; no load;

VI = VDD or VSS; note 1

1.3

2.4

V

Input SCL; input/output SDA

VIL

LOW level input voltage

-0.5

+0.3VDD

V

VIH

HIGH level input voltage

0.7VDD

VDD + 0.5

V

IOL

LOW level output current

VOL = 0.4 V

3

mA

|IL|

leakage current

VI = VDD or VSS

1

µA

CI

input capacitance

VI = VSS

7

pF

I/O Ports

VIL

LOW level input voltage

-0.5

+0.3VDD

V

VIH

HIGH level input voltage

-0.7VDD

VDD + 0.5

V

IIHL(max)

maximum allowed input

current through protection

diode

VI ≥VDD or VI≤ VSS

±400

µA

IOL

LOW level output current

VOL = 1 V; VDD = 5 V

10

25

mA

IOH

HIGH level output current

VOH = VSS

30

300

µA

IOHt

transient pull-up current

HIGH during acknowledge

(see Fig.14); VOH = VSS

;

VDD = 2.5 V

1

mA

CI

input capacitance

10

pF

CO

output capacitance

10

pF

Port timing CL ≤100 pF

tpv

output data valid

4

µs

tsu

input data set-up time

0

µs

th

input data hold time

4

µs

Interrupt INT

IOL

LOW level output current

VOL = 0.4 V

1.6

mA

|IL|

leakage current

VI = VDD or VSS

1

µA

Timing; CL ≤100 pF

tiv

input data valid time

4

µs

tir

reset delay time

4

µs

Select inputs A0 to A2

VIL

LOW level input voltage

-0.5

+0.3VDD

V

VIH

HIGH level input voltage

0.7VDD

VDD + 0.5

V

|ILI|

input leakage current

pin at VDD or VSS

250

nA

Note

1.

The power-on reset circuit resets the I

2C-bus logic with V

DD < VPOR and sets all Ports to logic 1 (with cur-

rent source to VDD)

.

Similar Part No. - INF8574

Manufacturer	Part #	Datasheet	Description
IK Semicon Co., Ltd	INF8574	384Kb / 11P	Compatible with most microcontrollers
IK Semicon Co., Ltd	INF8574A	384Kb / 11P	Operating supply voltage 2.5 to 6 V

More results

Similar Description - INF8574

Manufacturer	Part #	Datasheet	Description
KODENSHI_AUK CORP.	KKF8574	423Kb / 11P	silicon CMOS circuit.
Toshiba Semiconductor	TC74HC32AP	256Kb / 8P	CMOS Digital Integrated Circuit Silicon Monolithic CMOS Digital Integrated Circuit Silicon Monolithic
	TC74AC126P	278Kb / 6P	CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
	TC55V16100FT-10	427Kb / 8P	MOS DIGITAL INTEGRATED CIRCUIT SILICON CMOS
	TC74AC32FT	253Kb / 6P	CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
	TC9321F-009	231Kb / 5P	CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
List of Unclassifed Man...	TC40102BP	423Kb / 9P	CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
Toshiba Semiconductor	TC74AC367P	261Kb / 6P	CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
KEC(Korea Electronics)	KIC7S14FU	37Kb / 3P	SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT
Toshiba Semiconductor	TC7WH74FU	246Kb / 7P	CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

More results

INF8574 Datasheet(PDF) 9 Page - Integral Corp.

INF8574 Datasheet(HTML) 9 Page - Integral Corp.

Similar Part No. - INF8574

Similar Description - INF8574

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL