Semiconductor

MSM514265E/ESL

Preliminary

262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO

DESCRIPTION

The MSM514265E/ESL is a 262,144-word

× 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

technology. The MSM514265E/ESL achieves high integration, high-speed operation, and low-power

consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS

process. The MSM514265E/ESL is available in a 40-pin plastic SOJ or 44/40-pin plastic TSOP. The

MSM514265ESL (the Self-refresh version) is specially designed for lower-power applications.

FEATURES

•

262,144-word

× 16-bit configuration

•

Single 5V power supply,

±10% tolerance

•

Input

: TTL compatible, low input capacitance

•

Output

: TTL compatible, 3-state

•

Refresh

: 512 cycles/8ms, 512 cycles/128 ms (SL version)

•

Fast page mode with EDO, read modify write capability

•

CAS before RAS refresh, hidden refresh, RAS-only refresh capability

•

CAS before RAS self-refresh capability (SL version)

•

Package options:

40-pin 400mil plastic SOJ

(SOJ40-P-400-1.27)

(Product : MSM514265E/ESL-xxJS)

44/40-pin 400mil plastic TSOP (TSOPII44/40-P-400-0.80-K) (Product : MSM514265E./ESL-xxTS-K)

xx indicates speed rank.

PRODUCT FAMILY

Access Time (Max.)

Power Dissipation

Family

Cycle Time

(Min.)

Operating (Max.)

Standby (Max.)

60ns

30ns

15ns

15ns

104ns

633mW

MSM514265E/ESL

70ns

35ns

20ns

20ns

124ns

578mW

5.5mW/

1.1mW (SL version)

PEDD514265ESL-01

This version : Jan. 2001