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AN78N24 Datasheet(PDF) 7 Page - Panasonic Semiconductor |
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AN78N24 Datasheet(HTML) 7 Page - Panasonic Semiconductor |
7 / 9 page VO 18.7 V 18 VO V REGIN 100 mV 18 mV REGL mV 30 mV mA 2.8 13 Ibias mA mA 90 Vno dB 0.8 0.5 50 18.9 360 180 5 53 17.3 17.1 RR V 2 mA 300 mA 500 10 65 –1.0 Output voltage Output voltage tolerance Line regulation Load regulation Bias current Input bias current fluctuation Load bias current fluctuation Output noise voltage Ripple rejection ratio Minimum input/output voltage difference Output short circuit current Peak output current Output voltage temperature coefficient Parameter Symbol Condition min typ max Unit VI=21to 33V, IO=5 to 200mA VI=21to 33V, Tj=25˚C IO=1 to 300mA, Tj=25˚C IO=5 to 200mA, Tj=25˚C VI=22 to 33V, Tj=25˚C Tj=25˚C VI=21 to 33V, Tj=25˚C IO=1 to 300mA, Tj=25˚C f=10Hz to 100kHz VI=22 to 32V, IO=50mA, f=120Hz IO=300mA, Tj=25˚C VI=35V, Tj=25˚C Tj=25˚C IO=5mA, Tj=0 to 125˚C Tj=25˚C ∆I bias (IN) ∆I bias (L) µV VDIF (min.) IO (Short) IO (Peak) mV/˚C ∆V O/Ta Note 1) The specified condition Tj=25˚C means that the test should be carried out with the test time so short (within 10ms) that the drift in characteristic value due to the rise in chip junction temperature can be ignored. Note 2) When not specified, VI=27V, IO=100mA, CI=0.33 µF, C O=0.1 µF, T j=0 to 125˚C s Electrical Characteristics (Ta=25˚C) · AN78N18 (18V Type) VO 20.8 V 20 VO V REGIN 100 mV 19 mV REGL mV 30 mV mA 2.8 14 Ibias mA mA 100 Vno dB 0.8 0.5 50 21 400 200 5 52 19.2 19.0 RR V 2 mA 300 mA 500 10 64 –1.2 Output voltage Output voltage tolerance Line regulation Load regulation Bias current Input bias current fluctuation Load bias current fluctuation Output noise voltage Ripple rejection ratio Minimum input/output voltage difference Output short circuit current Peak output current Output voltage temperature coefficient Parameter Symbol Condition min typ max Unit VI=23 to 35V, IO=5 to 200mA VI=23 to 35V, Tj=25˚C IO=1 to 300mA, Tj=25˚C IO=5 to 200mA, Tj=25˚C VI=24 to 35V, Tj=25˚C Tj=25˚C VI=23 to 35V, Tj=25˚C IO=1 to 300mA, Tj=25˚C f=10Hz to 100kHz VI=24 to 34V, IO=50mA, f=120Hz IO=300mA, Tj=25˚C VI=35V, Tj=25˚C Tj=25˚C IO=5mA, Tj=0 to 125˚C Tj=25˚C ∆I bias (IN) ∆I bias (L) µV VDIF (min.) IO (Short) IO (Peak) mV/˚C ∆V O/Ta Note 1) The specified condition Tj=25˚C means that the test should be carried out with the test time so short (within 10ms) that the drift in characteristic value due to the rise in chip junction temperature can be ignored. Note 2) When not specified, VI=29V, IO=100mA, CI=0.33 µF, C O=0.1 µF, T j=0 to 125˚C · AN78N20 (20V Type) |
Similar Part No. - AN78N24 |
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Similar Description - AN78N24 |
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