LBSS123LT1–1/4

LESHAN RADIO COMPANY, LTD.

1

3

SOT-23

2

LBSS123LT1

3

1

2

Gate

Source

Drain

N-CHANNEL POWER MOSFET

LBSS123LT1

FEATURE

Pb-Free Package is available.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

LBSS123LT1

SA

3000/Tape&Reel

LBSS123LT1G

SA

(Pb-Free)

3000/Tape&Reel

LBSS123LT3

SA

10000/Tape&Reel

LBSS123LT3G

SA

(Pb-Free)

10000/Tape&Reel

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

VDSS

100

Vdc

Gate–Source Voltage

– Continuous

– Non–repetitive (tp ≤ 50 µs)

VGS

VGSM

±20

±40

Vdc

Vpk

Drain Current

Continuous (Note 1.)

Pulsed (Note 2.)

ID

IDM

0.17

0.68

Adc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5

Board (Note 3.)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to

Ambient

RqJA

556

°C/W

Junction and Storage Temperature

TJ,Tstg

–55 to +150

°C

1. The Power Dissipation of the package may result in a lower continuous drain

current.

2. Pulse Width

v 300 ms, Duty Cycle v 2.0%.

3. FR–5 = 1.0

 0.75  0.062 in.