LDTA114YET1 datasheet(2/4 Pages) LRC

Part #	LDTA114YET1

Description	Bias Resistor Transistors

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Manufacturer	LRC [Leshan Radio Company]

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LESHAN RADIO COMPANY, LTD.

LDTA114YET1-2/4

LDTA114YET1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0)

ICBO

–

100

nAdc

Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)

ICEO

–

500

nAdc

Emitter-Base Cutoff Current

(VEB = 6.0 V, IC = 0)

IEBO

–

0.2

mAdc

Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)

V(BR)CBO

50

–

Vdc

Collector-Emitter Breakdown Voltage (Note 3)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

50

–

Vdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(VCE = 10 V, IC = 5.0 mA)

hFE

80

–

Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)

VCE(sat)

–

0.25

Vdc

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)

VOL

–

0.2

Vdc

3. Pulse Test: Pulse Width < 300

µs, Duty Cycle < 2.0%

Output Voltage (on)

7.0

10

13

Resistor Ratio

R1/R2

0.17

0.21

0.25

Input Resistor

R1

k

Ω

(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)

Output Voltage (off)

VOH

––

Vdc

4.9

140

Version 1.0

Figure 1. Derating Curve

250

200

150

100

50

0

-50

0

50

100

150

TA, AMBIENT TEMPERATURE (°C)

RθJA = 600°C/W

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