3

–6.25

V

–6

V

120

mV

4

mV

mV

10

mV

mA

2

1.5

mA

mA

44

dB

1.3

0.5

60

–6.3

120

60

4

60

–5.75

–5.7

RR

V

1.1

A

2.1

3

73

– 0.5

typ

Output voltage

Output voltage tolerance

Line regulation

Load regulation

Bias current

Input bias fluctuation

Load bias current fluctuation

Output noise voltage

Ripple rejection ratio

Minimum i/o voltage difference

Peak output current

Output voltage temperature coefficient

Parameter

Symbol

Condition

min

max

Unit

=–8 to –21V,

=5mA to 1A, P

D

*

=–8 to –25V, T

j

=25˚C

=5mA to 1.5A, T

j

=25˚C

=250 to 750mA, T

j

=25˚C

=–9 to –13V, T

j

=25˚C

=25˚C

=–8 to –25V, T

j

=25˚C

µV

=5mA to 1A, T

j

=25˚C

f

=10Hz to 100kHz, Ta=25˚C

=–9 to –19V, I

O

=100mA, f=120Hz

=1A, T

j

=25˚C

=25˚C

=5mA, T

j

=0 to 125˚C

=25˚C

∆I

bias (IN)

∆I

bias (L)

mV/˚C

∆V

=25˚C means that the test should be carried out with the test time so short (within 10ms) that the

drift in characteristic value due to the rise in chip junction temperature can be ignored.

=–11V, I

O

=500mA, C

I

=2µF, C

O

=1µF, T

j

=0 to 125˚C

* AN7900T series : 15W, AN7900F series : 10.25W

s Electrical Characteristics (Ta

=25˚C) (continued)

• AN7906T/AN7906F (–6V Type)

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=

–7.3

V

–7

V

140

mV

5

mV

mV

12

mV

mA

2

1.5

mA

mA

48

dB

1.3

0.5

70

–7.35

140

70

4

58

–6.7

–6.65

RR

V

1.1

A

2.1

4

72

– 0.5

typ

Output voltage

Output voltage tolerance

Line regulation

Load regulation

Bias current

Input bias fluctuation

Load bias current fluctuation

Output noise voltage

Ripple rejection ratio

Minimum input/output voltage difference

Peak output current

Output voltage temperature coefficient

Parameter

Symbol

Condition

min

max

Unit

=–79 to –22V,

=5mA to 1A, P

D

*

=–9 to –25V, T

j

=25˚C

=5mA to 1.5A, T

j

=25˚C

=250 to 750mA, T

j

=25˚C

=–10 to –14V, T

j

=25˚C

=25˚C

=–9 to –25V, T

j

=25˚C

µV

=5mA to 1A, T

j

=25˚C

f

=10Hz to 100kHz, Ta=25˚C

=–10 to –20V, I

O

=100mA, f=120Hz

=1A, T

j

=25˚C

=25˚C

=5mA, T

j

=0 to 125˚C

=25˚C

∆I

bias (IN)

∆I

bias (L)

mV/˚C

∆V

=25˚C means that the test should be carried out with the test time so short (within 10ms) that the

drift in characteristic value due to the rise in chip junction temperature can be ignored.

=–12V, I

O

=500mA, C

I

=2µF, C

O

=1µF, T

j

=0 to 125˚C

* AN7900T series : 15W, AN7900F series : 10.25W

• AN7907T/AN7907F (–7V Type)

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=