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AN7920T Datasheet(PDF) 3 Page - Panasonic Semiconductor |
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AN7920T Datasheet(HTML) 3 Page - Panasonic Semiconductor |
3 / 8 page 3 VO –6.25 V –6 VO V REGIN 120 mV 4 mV REGL mV 10 mV mA 2 1.5 Ibias mA mA 44 Vno dB 1.3 0.5 60 –6.3 120 60 4 60 –5.75 –5.7 RR V 1.1 A 2.1 3 73 – 0.5 typ Output voltage Output voltage tolerance Line regulation Load regulation Bias current Input bias fluctuation Load bias current fluctuation Output noise voltage Ripple rejection ratio Minimum i/o voltage difference Peak output current Output voltage temperature coefficient Parameter Symbol Condition min max Unit VI =–8 to –21V, IO =5mA to 1A, P D * VI =–8 to –25V, T j =25˚C IO =5mA to 1.5A, T j =25˚C IO =250 to 750mA, T j =25˚C VI =–9 to –13V, T j =25˚C Tj =25˚C VI =–8 to –25V, T j =25˚C µV IO =5mA to 1A, T j =25˚C f =10Hz to 100kHz, Ta=25˚C VI =–9 to –19V, I O =100mA, f=120Hz IO =1A, T j =25˚C Tj =25˚C IO =5mA, T j =0 to 125˚C Tj =25˚C ∆I bias (IN) ∆I bias (L) VDIF (min.) IO (Peak) mV/˚C ∆V O/Ta Note 1) The specified condition Tj =25˚C means that the test should be carried out with the test time so short (within 10ms) that the drift in characteristic value due to the rise in chip junction temperature can be ignored. Note 2) Unless otherwise specified, VI =–11V, I O =500mA, C I =2µF, C O =1µF, T j =0 to 125˚C * AN7900T series : 15W, AN7900F series : 10.25W s Electrical Characteristics (Ta =25˚C) (continued) • AN7906T/AN7906F (–6V Type) < = VO –7.3 V –7 VO V REGIN 140 mV 5 mV REGL mV 12 mV mA 2 1.5 Ibias mA mA 48 Vno dB 1.3 0.5 70 –7.35 140 70 4 58 –6.7 –6.65 RR V 1.1 A 2.1 4 72 – 0.5 typ Output voltage Output voltage tolerance Line regulation Load regulation Bias current Input bias fluctuation Load bias current fluctuation Output noise voltage Ripple rejection ratio Minimum input/output voltage difference Peak output current Output voltage temperature coefficient Parameter Symbol Condition min max Unit VI =–79 to –22V, IO =5mA to 1A, P D * VI =–9 to –25V, T j =25˚C IO =5mA to 1.5A, T j =25˚C IO =250 to 750mA, T j =25˚C VI =–10 to –14V, T j =25˚C Tj =25˚C VI =–9 to –25V, T j =25˚C µV IO =5mA to 1A, T j =25˚C f =10Hz to 100kHz, Ta=25˚C VI =–10 to –20V, I O =100mA, f=120Hz IO =1A, T j =25˚C Tj =25˚C IO =5mA, T j =0 to 125˚C Tj =25˚C ∆I bias (IN) ∆I bias (L) VDIF (min.) IO (Peak) mV/˚C ∆V O/Ta Note 1) The specified condition Tj =25˚C means that the test should be carried out with the test time so short (within 10ms) that the drift in characteristic value due to the rise in chip junction temperature can be ignored. Note 2) Unless otherwise specified, VI =–12V, I O =500mA, C I =2µF, C O =1µF, T j =0 to 125˚C * AN7900T series : 15W, AN7900F series : 10.25W • AN7907T/AN7907F (–7V Type) < = |
Similar Part No. - AN7920T |
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Similar Description - AN7920T |
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