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AN79M15F Datasheet(PDF) 4 Page - Panasonic Semiconductor |
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AN79M15F Datasheet(HTML) 4 Page - Panasonic Semiconductor |
4 / 9 page VO –7.3 V –7 VO V REGIN 70 mV 6 mV REGL mV 20 mV mA 2 2 IBias mA mA 175 Vno dB 0.8 0.4 35 –7.35 140 70 4 59 –6.7 –6.65 RR V 1.1 mA 50 mA 1000 10 – 0.5 Parameter Symbol Condition min typ max Output voltage Output voltage tolerance Line regulation Load regulation Bias current Input bias current fluctuation Load bias current fluctuation Output noise voltage Ripple rejection ratio Minimum input/output voltage difference Output short circuit current Peak output current Output voltage temperature coefficient Unit VI=–9 to –25V, IO=5 to 350mA, PD * VI=–9 to –25V, Tj=25˚C IO=5 to 500mA, Tj=25˚C IO=5 to 350mA, Tj=25˚C VI=–10 to –20V, Tj=25˚C Tj=25˚C VI=–10 to –25V, Tj=25˚C IO=5 to 350mA, Tj=25˚C f=10Hz to 100kHz, Ta=25˚C VI=–10 to –20V, IO=100mA, f=120Hz, Ta=25˚C Tj=25˚C IO (Short) IO (peak) VI=–35V, Tj=25˚C Tj=25˚C ∆V O/Ta IO=5mA, Tj=0 to 125˚C Note 1) The specified condition Tj=25˚C means that the test should be carried out with the test time so short (within 10ms) that the drift in characteristic value due to the rise in chip junction temperature can be ignored. Note 2) When not specified, VI=–12V, IO=350mA, CI=2 µF, C O=1 µF and T j=0 to 125˚C * AN79M07 : 15W, AN79M07F : 10.25W s Electrical Characteristics (Ta=25˚C) µV Tj=25˚C ∆I bias (IN) ∆I bias (L) VDIF (min.) mV/˚C · AN79M07/AN79M07F (–7V Type) < = VO –8.3 V –8 VO V REGIN 80 mV mV REGL mV mV mA 2 IBias mA mA 200 Vno dB 0.8 0.4 40 –8.4 160 80 4 59 –7.7 –7.6 RR V 1.1 mA 50 mA 1000 6 2 25 10 – 0.6 Parameter Symbol Condition min typ max Output voltage Output voltage tolerance Line regulation Load regulation Bias current Input bias current fluctuation Load bias current fluctuation Output noise voltage Ripple rejection ratio Minimum input/output voltage difference Output short circuit current Peak output current Output voltage temperature coefficient Unit VI=–10.5 to –25V, IO=5 to 350mA, PD * VI=–10.5 to –25V, Tj=25˚C IO=5 to 500mA, Tj=25˚C IO=5 to 350mA, Tj=25˚C VI=–11 to –21V, Tj=25˚C Tj=25˚C VI=–10.5 to –25V, Tj=25˚C IO=5 to 350mA, Tj=25˚C f=10Hz to 100kHz, Ta=25˚C VI=–11.5 to –21.5V, IO=100mA, f=120Hz, Ta=25˚C Tj=25˚C IO (Short) IO (peak) VI=–35V, Tj=25˚C Tj=25˚C ∆V O/Ta IO=5mA, Tj=0 to 125˚C Note 1) The specified condition Tj=25˚C means that the test should be carried out with the test time so short (within 10ms) that the drift in characteristic value due to the rise in chip junction temperature can be ignored. Note 2) When not specified, VI=–14V, IO=350mA, CI=2 µF, C O=1 µF and T j=0 to 125˚C * AN79M08 : 15W, AN79M08F : 10.25W µV Tj=25˚C ∆I bias (IN) ∆I bias (L) VDIF (min.) mV/˚C · AN79M08/AN79M08F (–8V Type) < = |
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Similar Description - AN79M15F |
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