LMUN5312DW1T1 datasheet(4/29 Pages) LRC

Part #	LMUN5312DW1T1

Description	Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

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Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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4 / 29 page

LESHAN RADIO COMPANY, LTD.

LMUN5311DW-4/29

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Cutoff Current (VCB = 50 V, IE = 0)

ICBO

−

100

nAdc

Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)

ICEO

−

500

nAdc

Emitter-Base Cutoff Current

LMUN5311DW1T1

(VEB = 6.0 V, IC = 0)

LMUN5312DW1T1

LMUN5313DW1T1

LMUN5314DW1T1

LMUN5315DW1T1

LMUN5316DW1T1

LMUN5330DW1T1

LMUN5331DW1T1

LMUN5332DW1T1

LMUN5333DW1T1

LMUN5334DW1T1

LMUN5335DW1T1

IEBO

−

0.5

0.2

0.1

0.2

0.9

1.9

4.3

2.3

1.5

0.18

0.13

0.2

mAdc

Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)

V(BR)CBO

50

−

Vdc

Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0)

V(BR)CEO

50

−

Vdc

3. Pulse Test: Pulse Width < 300

ms, Duty Cycle < 2.0%

Figure 1. Derating Curve

300

200

150

100

50

0

− 50

0

50

100

150

TA, AMBIENT TEMPERATURE (°C)

RqJA = 490°C/W

250

ALL LMUN5311DW1T1 SERIES DEVICES

LMUN5311DW1T1 Series

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