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M464S0924CT1 Datasheet(PDF) 5 Page - Samsung semiconductor |
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M464S0924CT1 Datasheet(HTML) 5 Page - Samsung semiconductor |
5 / 9 page M464S0924CT1 PC100 SODIMM Rev. 0.0 April. 2000 DC CHARACTERISTICS 1. Measured with outputs open. 2. Refresh period is 64ms. 3. Unless otherwise noted, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ) Notes : (Recommended operating condition unless otherwise noted, TA = 0 to 70 °C) Parameter Symbol Test Condition Version Unit Not e -1H -1L Operating current (One bank active) ICC1 Burst length = 1 tRC ≥ tRC(min) IO = 0 mA 560 mA 1 Precharge standby current in power-down mode ICC2P CKE ≤ VIL(max), tCC = 10ns 4 mA ICC2PS CKE & CLK ≤ VIL(max), tCC =∞ 4 Precharge standby current in non power-down mode ICC2N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns 80 mA ICC2NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC =∞ Input signals are stable 28 Active standby current in power-down mode ICC3P CKE ≤ VIL(max), tCC = 10ns 20 mA ICC3PS CKE & CLK ≤ VIL(max), tCC =∞ 20 Active standby current in non power-down mode (One bank active) ICC3N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns 120 mA ICC3NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC =∞ Input signals are stable 80 mA Operating current (Burst mode) ICC4 IO = 0 mA Page burst 4Banks activated tCCD = 2CLKs 580 mA 1 Refresh current ICC5 tRC ≥ tRC(min) 840 mA 2 Self refresh current ICC6 CKE ≤ 0.2V C 6 mA L 3.2 mA |
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