3
SY10/100/101474-3
SY10/100/101474-4
SY10/100/101474-5
SY10/100/101474-7
Parameter
Symbol Min.
Typ.
Max. Unit
Supply Voltage(1)
10K
VEE
–5.46
–5.2
–4.94
V
Case Temperature
TC
0
—
75
°C
Supply Voltage(1)
100K
VEE
–4.8
–4.5
–4.2
V
Case Temperature
TC
0
—
85
°C
Supply Voltage(1)
101K
VEE
–5.46
–5.2
–4.94
V
Case Temperature
TC
0
—
85
°C
NOTE:
1. Referenced to VCC.
FUNCTIONAL DESCRIPTION
The Synergy SY10/100/101474 are 4096-bit RAMs
organized as 1024-words-by-4-bits. Memory cell selection
is achieved by using the 10 address bits designated as A0
through A9.
Each of the 210 possible input address
combinations corresponds to a unique word location in
memory. The active low Chip Select (CS) is provided for
memory expansion.
The active low Write Enable (WE)
controls the read and write operation. Data resident on the
DIN inputs (DI0 through DI3) is written into the addressed
location only when WE and CS are held low. In order to
perform a read operation, WE is held high, CS is held low
and the non-inverted output data at the addressed location
is transferred to DOUT (DO0 through DO3) to be read out.
Open emitter outputs are provided for maximum flexibility
and memory expansion by allowing output wire-OR
connections. External termination of 50
Ω to –2.0V or an
equivalent circuit must be used to provide the specified
output levels.
The outputs are brought to a logical low level when the
RAM is being written into (WE = LOW) or when the device
is deselected via the active low chip select pin (CS = HIGH).
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Rating
Value
Unit
VEE
VEE Pin Potential
+0.5 to –7.0
V
to VCC Pin
VIN
Input Voltage
+0.5 to VEE
V
IOUT
DC Output Current
–30
mA
(Output High)
TC
Temperature Under Bias
–55 to +125
°C
Tstore
Storage Temperature
–65 to +150
°C
NOTE:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS
are exceeded. This is a stress rating only and functional operation is not
implied at conditions other than those detailed in the operational sections
of this data sheet. Exposure to ABSOLUTE MAXIMUM RATlNG conditions
for extended periods may affect device reliability.
GUARANTEED OPERATING CONDITIONS
CAPACITANCE
Parameter
Symbol
Min.
Typ.
Max.
Unit
Input Pin
CIN
—
4
—
pF
Capacitance
Output Pin
COUT
—
5
—
pF
Capacitance
RISE AND FALL TIME
Parameter
Code(1) Symbol Min.
Typ.
Max. Unit
Output Rise
F
tr
—
500
—
ps
Time
S
—
1500
—
Output Fall
F
tf
—
500
—
ps
Time
S
—
1500
—
NOTE:
1. F = Fast Edge Rate
S = Standard Edge Rate
SYNERGY
SEMICONDUCTOR
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