©2006 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FDPF12N35 Rev. A

UniFET

TM

February 2006

FDPF12N35

350V N-Channel MOSFET

Features

• Low gate charge ( typical 18 nC)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild’s proprietary, planar stripe,

DMOS technology.

This advanced technology has been especially tailored to mini-

mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

cient switched mode power supplies and active power factor

correction.

Absolute Maximum Ratings

Thermal Characteristics

S

D

G

TO-220F

FDPF Series

G

S

D

Symbol

Parameter

FDPF12N35

Unit

Drain-Source Voltage

350

V

Drain Current

7.5

4.5

A

A

Drain Current

- Pulsed

(Note 1)

30

A

Gate-Source voltage

±30

V

Single Pulsed Avalanche Energy

(Note 2)

335

mJ

Avalanche Current

(Note 1)

7.5

A

Repetitive Avalanche Energy

(Note 1)

5mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

Power Dissipation

- Derate above 25

°C

50

0.35

W

W/

°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°C

Symbol

Parameter

Min.

Max.

Unit

Thermal Resistance, Junction-to-Case

--

2.5

°C/W

Thermal Resistance, Junction-to-Ambient

--

62.5

°C/W