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FDPF12N35 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDPF12N35 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDPF12N35 Rev. A UniFET TM February 2006 FDPF12N35 350V N-Channel MOSFET Features • 7.5A, 350V, RDS(on) = 0.38Ω @VGS = 10 V • Low gate charge ( typical 18 nC) •Low Crss ( typical 15 pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi- cient switched mode power supplies and active power factor correction. Absolute Maximum Ratings Thermal Characteristics S D G TO-220F FDPF Series G S D Symbol Parameter FDPF12N35 Unit VDSS Drain-Source Voltage 350 V ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 7.5 4.5 A A IDM Drain Current - Pulsed (Note 1) 30 A VGSS Gate-Source voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 335 mJ IAR Avalanche Current (Note 1) 7.5 A EAR Repetitive Avalanche Energy (Note 1) 5mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) - Derate above 25 °C 50 0.35 W W/ °C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter Min. Max. Unit RθJC Thermal Resistance, Junction-to-Case -- 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W |
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