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FDC658AP Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # FDC658AP
Description  Single P-Channel Logic Level PowerTrench짰 MOSFET -30V, -4A, 50mOhm
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDC658AP Datasheet(HTML) 1 Page - Fairchild Semiconductor

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January 2006
©2006 Fairchild Semiconductor Corporation
FDC658AP Rev. B (W)
www.fairchildsemi.com
1
FDC658AP
Single P-Channel Logic Level PowerTrench® MOSFET
-30V, -4A, 50m
Ω
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild's advanced PowerTrench process. It has been
optimized for battery power management applications.
Applications
Battery management
Load switch
Battery protection
DC/DC conversion
Features
Max rDS(on) = 50 mΩ @ VGS = -10 V, ID = -4A
Max rDS(on) = 75 mΩ @ VGS = -4.5 V, ID = -3.4A
Low Gate Charge
High performance trench technology for extremely low
rDS(on)
RoHS Compliant
Absolute Maximum Ratings T
A = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±25
V
ID
Drain Current - Continuous
-4
A
-20
PD
Maximum Power dissipation
1.6
W
0.8
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
RθJA
Thermal Resistance, Junction-to-Ambient
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
30
°C/W
Device Marking
Device
Reel Size
Tape Width
Quantity
.58A
FDC658AP
7inch
8mm
3000 units
PIN 1
SuperSOTTM-6
S
D
D
G
D
D
5
1
6
2
3
4
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1)
(Note 1a)
- Pulsed


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