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AOT402L Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOT402L Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 5 page  AOT402 Symbol Min Typ Max Units BVDSS 105 V 1 TJ=55°C 5 IGSS 100 nA VGS(th) 2 3.3 4 V ID(ON) 200 A 6.9 8.6 TJ=125°C 12.8 15 7.9 10 m Ω gFS 88 S VSD 0.7 1 V IS 110 A Ciss 7.7 10 nF Coss 820 pF Crss 300 pF Rg 1.25 2 Ω Qg(10V) 182 230 nC Qgs 54 nC Qgd 44 nC tD(on) 30.5 ns tr 42.5 ns tD(off) 66 ns tf 16 ns trr 86 115 ns Qrr 375 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time Drain-Source Breakdown Voltage On state drain current ID=10mA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=30A Reverse Transfer Capacitance IF=30A, dI/dt=100A/µs VGS=0V, VDS=25V, f=1MHz SWITCHING PARAMETERS Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA Gate Threshold Voltage VDS=VGS, ID=250µA VDS=84V, VGS=0V VDS=0V, VGS=±25V Zero Gate Voltage Drain Current Gate-Body leakage current RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage m Ω VGS=6V, ID=30A IS=1A, VGS=0V VDS=5V, ID=30A Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Total Gate Charge VGS=10V, VDS=25V, ID=30A Gate Source Charge Gate Drain Charge Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=25V, RL=0.75Ω, RGEN=3Ω A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. Rev0: Sept. 2005 Alpha & Omega Semiconductor, Ltd. |
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