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AOU403 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

Part # AOU403
Description  P-Channel Enhancement Mode Field Effect Transistor
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOU403 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

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background image
AOU403
Symbol
Min
Typ
Max
Units
BVDSS
-60
V
-0.003
-1
TJ=55°C
-5
IGSS
±100
nA
VGS(th)
-1.5
-2.1
-3
V
ID(ON)
-30
A
91
115
TJ=125°C
150
114
150
m
gFS
12.8
S
VSD
-0.76
-1
V
IS
-12
A
Ciss
987
1185
pF
Coss
114
pF
Crss
46
pF
Rg
710
Qg(10V)
15.8
20
nC
Qg(4.5V)
7.4
9
nC
Qgs
3nC
Qgd
3.5
nC
tD(on)
9ns
tr
10
ns
tD(off)
25
ns
tf
11
ns
trr
27.5
35
ns
Qrr
30
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=0V, VDS=-30V, f=1MHz
Gate Drain Charge
Total Gate Charge (10V)
VGS=-10V, VDS=-30V, ID=-12A
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-30V, RL=2.5Ω,
RGEN=3Ω
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
m
VGS=-4.5V, ID=-8A
IS=-1A,VGS=0V
VDS=-5V, ID=-12A
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
µA
Gate Threshold Voltage
VDS=VGS ID=-250µA
VDS=-48V, VGS=0V
VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=-250µA, VGS=0V
VGS=-10V, VDS=-5V
VGS=-10V, ID=-12A
Reverse Transfer Capacitance
IF=-12A, dI/dt=100A/µs
A: The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev 2: August 2005
Alpha & Omega Semiconductor, Ltd.


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