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AOU403 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOU403 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 5 page AOU403 Symbol Min Typ Max Units BVDSS -60 V -0.003 -1 TJ=55°C -5 IGSS ±100 nA VGS(th) -1.5 -2.1 -3 V ID(ON) -30 A 91 115 TJ=125°C 150 114 150 m Ω gFS 12.8 S VSD -0.76 -1 V IS -12 A Ciss 987 1185 pF Coss 114 pF Crss 46 pF Rg 710 Ω Qg(10V) 15.8 20 nC Qg(4.5V) 7.4 9 nC Qgs 3nC Qgd 3.5 nC tD(on) 9ns tr 10 ns tD(off) 25 ns tf 11 ns trr 27.5 35 ns Qrr 30 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS VGS=0V, VDS=-30V, f=1MHz Gate Drain Charge Total Gate Charge (10V) VGS=-10V, VDS=-30V, ID=-12A Turn-On Rise Time Turn-Off DelayTime VGS=-10V, VDS=-30V, RL=2.5Ω, RGEN=3Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time SWITCHING PARAMETERS Total Gate Charge (4.5V) Gate Source Charge m Ω VGS=-4.5V, ID=-8A IS=-1A,VGS=0V VDS=-5V, ID=-12A RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage IDSS µA Gate Threshold Voltage VDS=VGS ID=-250µA VDS=-48V, VGS=0V VDS=0V, VGS=±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current ID=-250µA, VGS=0V VGS=-10V, VDS=-5V VGS=-10V, ID=-12A Reverse Transfer Capacitance IF=-12A, dI/dt=100A/µs A: The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. Rev 2: August 2005 Alpha & Omega Semiconductor, Ltd. |
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