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AOU417 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

Part # AOU417
Description  P-Channel Enhancement Mode Field Effect Transistor
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOU417 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

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background image
AOU417
Symbol
Min
Typ
Max
Units
BVDSS
-30
V
-1
TJ=55°C
-5
IGSS
±100
nA
VGS(th)
-1.4
-2
-2.7
V
ID(ON)
-40
A
18
22
TJ=125°C
25
30
29
40
m
gFS
21
S
VSD
-0.7
-1
V
IS
-1.2
A
Ciss
1573
1900
pF
Coss
319
pF
Crss
211
pF
Rg
6.7
10
Qg(10V)
29.3
35
nC
Qg(4.5V)
15
18
nC
Qgs
6.1
nC
Qgd
7nC
tD(on)
11.7
ns
tr
29
ns
tD(off)
42
ns
tf
32.5
ns
trr
28.3
37
ns
Qrr
20.5
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-18A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=-250µA, VGS=0V
VGS=-10V, VDS=-5V
VGS=-10V, ID=-18A
Reverse Transfer Capacitance
IF=-18A, dI/dt=100A/µs
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
µA
Gate Threshold Voltage
VDS=VGS ID=-250µA
VDS=-24V, VGS=0V
VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
VGS=-4.5V, ID=-10A
IS=-1A,VGS=0V
VDS=-5V, ID=-18A
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=0.83Ω,
RGEN=3Ω
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=0V, VDS=-15V, f=1MHz
Gate Drain Charge
Total Gate Charge (10V)
VGS=-10V, VDS=-15V, ID=-18A
A: The value of R θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤ 10s thermal resistance
rating.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
E. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev1: August 2005
Alpha & Omega Semiconductor, Ltd.


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