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AOU417 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOU417 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 5 page AOU417 Symbol Min Typ Max Units BVDSS -30 V -1 TJ=55°C -5 IGSS ±100 nA VGS(th) -1.4 -2 -2.7 V ID(ON) -40 A 18 22 TJ=125°C 25 30 29 40 m Ω gFS 21 S VSD -0.7 -1 V IS -1.2 A Ciss 1573 1900 pF Coss 319 pF Crss 211 pF Rg 6.7 10 Ω Qg(10V) 29.3 35 nC Qg(4.5V) 15 18 nC Qgs 6.1 nC Qgd 7nC tD(on) 11.7 ns tr 29 ns tD(off) 42 ns tf 32.5 ns trr 28.3 37 ns Qrr 20.5 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-18A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current ID=-250µA, VGS=0V VGS=-10V, VDS=-5V VGS=-10V, ID=-18A Reverse Transfer Capacitance IF=-18A, dI/dt=100A/µs Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA Gate Threshold Voltage VDS=VGS ID=-250µA VDS=-24V, VGS=0V VDS=0V, VGS=±20V Zero Gate Voltage Drain Current Gate-Body leakage current RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage m Ω VGS=-4.5V, ID=-10A IS=-1A,VGS=0V VDS=-5V, ID=-18A Turn-On Rise Time Turn-Off DelayTime VGS=-10V, VDS=-15V, RL=0.83Ω, RGEN=3Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time SWITCHING PARAMETERS Total Gate Charge (4.5V) Gate Source Charge Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS VGS=0V, VDS=-15V, f=1MHz Gate Drain Charge Total Gate Charge (10V) VGS=-10V, VDS=-15V, ID=-18A A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. E. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. Rev1: August 2005 Alpha & Omega Semiconductor, Ltd. |
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