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AOB428 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOB428 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 5 page AOB428 Symbol Min Typ Max Units BVDSS 105 V 1 TJ=55°C 5 IGSS 100 nA VGS(th) 2.5 3.2 4 V ID(ON) 100 A 22.7 28 TJ=125°C 44 53 25 31 m Ω gFS 50 S VSD 0.73 1 V IS 55 A Ciss 2038 2445 pF Coss 204 pF Crss 85 pF Rg 1.3 1.56 Ω Qg(10V) 38.5 46 nC Qgs 7.7 nC Qgd 13.4 nC tD(on) 12.7 ns tr 8.2 ns tD(off) 31.5 ns tf 11.2 ns trr 61.6 74 ns Qrr 172.4 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=50V, RL=2.7Ω, RGEN=3Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Total Gate Charge VGS=10V, VDS=50V, ID=30A Gate Source Charge Gate Drain Charge m Ω VGS=6V, ID=20A IS=1A, VGS=0V VDS=5V, ID=20A RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage IDSS µA Gate Threshold Voltage VDS=VGS, ID=250µA VDS=84V, VGS=0V VDS=0V, VGS=±25V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Drain-Source Breakdown Voltage On state drain current ID=10mA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=20A Reverse Transfer Capacitance IF=30A, dI/dt=100A/µs VGS=0V, VDS=25V, f=1MHz SWITCHING PARAMETERS A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev0: Sept2005 Alpha & Omega Semiconductor, Ltd. |
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