AOD406 datasheet(1/5 Pages) AOSMD

Part #	AOD406

Description	N-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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Symbol

VDS

VGS

IDM

IAR

EAR

TJ, TSTG

Symbol

Typ

Max

14.2

20

40

50

RθJL

0.56

1.5

Junction and Storage Temperature Range

-55 to 175

mJ

W

50

W

°C

Repetitive avalanche energy L=0.1mH

C

140

Power Dissipation

A

ID

Avalanche Current

C

30

A

200

Continuous Drain

Current

B,G

Maximum

Units

Parameter

TC=25°C

G

TC=100°C

B

30

85

75

TA=25°C

PDSM

2.5

Power Dissipation

B

TC=25°C

PD

100

TC=100°C

TA=70°C

1.6

°C/W

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

±12

Pulsed Drain Current

Gate-Source Voltage

Drain-Source Voltage

Maximum Junction-to-Ambient

A

Steady-State

Maximum Junction-to-Lead

C

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

°C/W

AOD406

N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 30V

ID = 85A (VGS = 10V)

RDS(ON) < 5.0mΩ (VGS = 10V)

RDS(ON) < 5.7mΩ (VGS = 4.5V)

General Description

The AOD406 uses advanced trench technology to provide

excellent RDS(ON), shoot-through immunity and body diode

characteristics. This device is ideally suited for use as a low

side switch in CPU core power conversion. Standard

Product AOD406 is Pb-free (meets ROHS & Sony 259

specifications). AOD406L is a Green Product ordering

option. AOD406 and AOD406L are electrically identical.

G

D

S

G

D

S

TO-252

D-PAK

Top View

Drain Connected

to Tab

Alpha & Omega Semiconductor, Ltd.

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AOD406 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

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