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AOD412L Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOD412L Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
1 / 5 page Symbol VDS VGS IDM IAR EAR TJ, TSTG Symbol Typ Max 14.2 20 39 50 RθJL 0.8 1.5 2.5 W TA=70°C 1.6 W Junction and Storage Temperature Range A PD °C 100 50 -55 to 175 TC=100°C ID Continuous Drain Current B,G Maximum Units Parameter TC=25°C G TC=100°C B 30 Maximum Junction-to-Ambient A Steady-State 85 65 200 Avalanche Current C 30 Power Dissipation A TA=25°C PDSM °C/W Absolute Maximum Ratings TA=25°C unless otherwise noted V V ±20 Pulsed Drain Current Power Dissipation B TC=25°C Gate-Source Voltage Drain-Source Voltage Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA °C/W A Repetitive avalanche energy L=0.1mH C 120 mJ AOD412 N-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7.0mΩ (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 4.5V) General Description The AOD412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD412 is Pb-free (meets ROHS & Sony 259 specifications). AOD412L is a Green Product ordering option. AOD412 and AOD412L are electrically identical. G D S G D S TO-252 D-PAK Top View Drain Connected to Tab Alpha & Omega Semiconductor, Ltd. |
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Similar Description - AOD412L |
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