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AON4701 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AON4701 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 5 page  Symbol Units VDS V VGS V TA=25°C TA=70°C IDM VKA V TA=25°C TA=70°C IFM TA=25°C TA=70°C TJ, TSTG °C Symbol Units RθJL RθJL 130 Maximum Junction-to-Lead C Steady-State 40 50 Thermal Characteristics Schottky Maximum Junction-to-Ambient A t ≤ 10s RθJA 60 75 °C/W Maximum Junction-to-Ambient A Steady-State 89 75 °C/W Maximum Junction-to-Ambient A Steady-State 81 100 Maximum Junction-to-Lead C Steady-State 37 45 Maximum Junction-to-Ambient A t ≤ 10s RθJA 49 Parameter: Thermal Characteristics MOSFET Typ Max W 1.1 0.62 Junction and Storage Temperature Range -55 to 150 -55 to 150 Power Dissipation PD 1.7 0.96 A 1.2 Pulsed Forward Current B 7 Schottky reverse voltage 20 Continuous Forward Current A IF 1.9 A -2.7 Pulsed Drain Current B -15 Gate-Source Voltage ±8 Continuous Drain Current A ID -3.4 Parameter MOSFET Schottky Drain-Source Voltage -20 Absolute Maximum Ratings TA=25°C unless otherwise noted AON4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode Features VDS (V) = -20V ID = -3.4A (VGS = -4.5V) RDS(ON) < 90mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) RDS(ON) < 160mΩ (VGS = -1.8V) SCHOTTKY VKA (V) = 20V, IF = 1A, VF<0.5V@0.5A General Description The AON4701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AON4701 is Pb-free (meets ROHS & Sony 259 specifications). A K G D S G S A A D D K K 1 2 3 4 8 7 6 5 DFN3X2-8L |
Similar Part No. - AON4701 |
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Similar Description - AON4701 |
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