AO8810 datasheet(1/4 Pages) AOSMD

Part #	AO8810

Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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Symbol

VDS

VGS

IDM

TJ, TSTG

Symbol

Typ

Max

64

83

89

120

RθJL

53

70

W

Maximum Junction-to-Lead

C

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

°C/W

Maximum Junction-to-Ambient

A

Steady-State

°C/W

±8

Gate-Source Voltage

Drain-Source Voltage

20

Continuous Drain

Current

A

Maximum

Units

Parameter

TA=25°C

TA=70°C

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

5.7

30

Pulsed Drain Current

B

Power Dissipation

A

TA=25°C

Junction and Storage Temperature Range

A

PD

°C

1.5

1

-55 to 150

TA=70°C

ID

7

AO8810

Common-Drain Dual N-Channel Enhancement Mode Field

Effect Transistor

Features

VDS (V) = 20V

ID = 7 A (VGS = 4.5V)

RDS(ON) < 20mΩ (VGS = 4.5V)

RDS(ON) < 24mΩ (VGS = 2.5V)

RDS(ON) < 32mΩ (VGS = 1.8V)

ESD Rating: 2000V HBM

General Description

The AO8810 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with gate

voltages as low as 1.8V. This device is suitable for use as a

load switch or in PWM applications. It is ESD protected.

AO8810L is offered in a lead-free package. Standard

Product AO8810 is Pb-free (meets ROHS & Sony 259

specifications). AO8810L is a Green Product ordering

option. AO8810 and AO8810L are electrically identical.

G1

S1

D1/D2

G2

S2

D1/D2

1

2

3

4

8

7

6

5

TSSOP-8

Top View

G1

D1

S1

G2

D2

S2

Alpha & Omega Semiconductor, Ltd.

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AO8810 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

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