Excelics
EFC240B
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
•
+31.0dBm TYPICAL OUTPUT POWER
•
8.5dB TYPICAL POWER GAIN AT 12GHz
•
HIGH BVgd FOR 10V BIAS
•
0.3 X 2400 MICRON RECESSED
“MUSHROOM” GATE
•
Si3N4 PASSIVATION
•
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
•
Idss SORTED IN 40mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (Ta = 25
OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN
TYP
MAX
UNIT
P1dB
Output Power at 1dB Compression
f=12GHz
Vds=10V, Ids=50% Idss
f=18GHz
29.0
31.0
31.0
dBm
G1dB
Gain at 1dB Compression
f=12GHz
Vds=10V, Ids=50% Idss
f=18GHz
7.0
8.5
6.0
dB
PAE
Power Added Efficiency at 1dB compression
Vds=10V, Ids=50% Idss
f=12GHz
33
%
Idss
Saturated Drain Current
Vds=3V, Vgs=0V
320
520
720
mA
Gm
Transconductance
Vds=3V, Vgs=0V
200
280
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=6mA
-2.5
-4.0
V
BVgd
Drain Breakdown Voltage Igd=2.4mA
-15
-20
V
BVgs
Source Breakdown Voltage Igs=2.4mA
-10
-17
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
20
oC/W
MAXIMUM RATINGS AT 25
OC
SYMBOLS
PARAMETERS
ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
14V
10V
Vgs
Gate-Source Voltage
-8V
-4.5V
Ids
Drain Current
Idss
570mA
Igsf
Forward Gate Current
60mA
10mA
Pin
Input Power
29dBm
@ 3dB Compression
Tch
Channel Temperature
175
oC
150
oC
Tstg
Storage Temperature
-65/175
oC
-65/150
oC
Pt
Total Power Dissipation
6.8 W
5.7 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 75
± 13 microns
All Dimensions In Microns
960
50
350
50
120
48
100
95
40
156
D
DD
D
G
GG
G
S
S
S
S
S
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