1

MRF9030LR1 MRF9030LSR1

MOTOROLA RF DEVICE DATA

The RF Sub-Micron MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequen-

cies up to 1.0 GHz. The high gain and broadband performance of these devices

make them ideal for large-signal, common-source amplifier applications in

26 volt base station equipment.

• Typical Two-Tone Performance at 945 MHz, 26 Volts

Output Power — 30 Watts PEP

Power Gain — 19 dB

Efficiency — 41.5%

IMD — -32.5 dBc

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW

Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.

• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain-Source Voltage

68

Vdc

Gate-Source Voltage

- 0.5, +15

Vdc

MRF9030LR1

Derate above 25°C

MRF9030LSR1

92

0.53

117

0.67

Watts

W/°C

Storage Temperature Range

- 65 to +150

°C

Operating Junction Temperature

200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

MRF9030LR1

MRF9030LSR1

1.9

1.5

°C/W

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

1 (Minimum)

Machine Model

M1 (Minimum)

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Order this document

by MRF9030/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF9030LR1

MRF9030LSR1

945 MHz, 30 W, 26 V

LATERAL N-CHANNEL

BROADBAND

RF POWER MOSFETs

CASE 360B-05, STYLE 1

NI-360

MRF9030LR1

CASE 360C-05, STYLE 1

NI-360S

MRF9030LSR1

REV 4

Freescale Semiconductor, Inc.

For More Information On This Product,

Go to: www.freescale.com