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AO4815 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AO4815 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 4 page  AO4815 Symbol Min Typ Max Units BVDSS -30 V -1 TJ=55°C -5 IGSS ±1 µA VGS(th) -1 -2.8 -3 V ID(ON) -40 A 14.1 18 TJ=125°C 19 24 16.2 20 m Ω 37 m Ω gFS 15 S VSD -1 V IS -2.6 A Ciss 2330 2900 pF Coss 480 pF Crss 320 pF Rg 6.8 10 Ω Qg 41 52 nC Qgs 10 nC Qgd 12 nC tD(on) 13 ns tr 12 ns tD(off) 51 ns tf 30.5 ns trr 28 35 ns Qrr 20.5 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS VGS=0V, VDS=-15V, f=1MHz Gate Drain Charge Turn-On Rise Time Turn-Off DelayTime VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time SWITCHING PARAMETERS Total Gate Charge VGS=-10V, VDS=-15V, ID=-8A Gate Source Charge m Ω VGS=-10V, ID=-8A IS=-1A,VGS=0V VDS=-5V, ID=-8A VGS=-4.5V, ID=-5A RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage IDSS µA Gate Threshold Voltage VDS=VGS ID=-250µA VDS=-24V, VGS=0V VDS=0V, VGS=±25V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current ID=-250µA, VGS=0V VGS=-10V, VDS=-5V VGS=-20V, ID=-8A Reverse Transfer Capacitance IF=-8A, dI/dt=100A/µs A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 2: Aug 2005 Alpha & Omega Semiconductor, Ltd. |
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