AO4904

Symbol

Min

Typ

Max

Units

30

V

1

5

100

nA

0.7

1

1.4

V

25

A

22.6

27

33

40

27

32

m

Ω

42

50

m

Ω

12

16

S

0.71

1

V

3A

846

1050

pF

96

pF

67

pF

1.24

3.6

Ω

9.6

12

nC

1.65

nC

3nC

5.7

8.55

ns

13

6.2

ns

37

40

ns

4.2

5.5

ns

Body Diode Reverse Recovery time

15.5

20

ns

7.9

nC

SCHOTTKY PARAMETERS

0.45

0.5

V

0.007 0.05

3.2

10

12

20

37

pF

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Junction Capacitance

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Forward Voltage Drop

Maximum reverse leakage current

Output Capacitance

Reverse Transfer Capacitance

mA

SWITCHING PARAMETERS

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Gate resistance

Forward Transconductance

Diode Forward Voltage

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Input Capacitance

Static Drain-Source On-Resistance

m

Ω

Gate Threshold Voltage

On state drain current

µA

Gate-Body leakage current

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Parameter

Conditions

STATIC PARAMETERS

The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal

resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µs pulses, duty cycle 0.5% max.

SOA curve provides a single pulse rating.

Rev 3 :

August 2005

Alpha & Omega Semiconductor, Ltd.