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AO4904 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AO4904 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 5 page AO4904 Symbol Min Typ Max Units BVDSS 30 V 1 TJ=55°C 5 IGSS 100 nA VGS(th) 0.7 1 1.4 V ID(ON) 25 A 22.6 27 TJ=125°C 33 40 27 32 m Ω 42 50 m Ω gFS 12 16 S VSD 0.71 1 V IS 3A Ciss 846 1050 pF Coss 96 pF Crss 67 pF Rg 1.24 3.6 Ω Qg 9.6 12 nC Qgs 1.65 nC Qgd 3nC tD(on) 5.7 8.55 ns tr 13 6.2 ns tD(off) 37 40 ns tf 4.2 5.5 ns trr Body Diode Reverse Recovery time IF=5A, dI/dt=100A/µs 15.5 20 ns Qrr Body Diode Reverse Recovery charge IF=5A, dI/dt=100A/µs 7.9 nC SCHOTTKY PARAMETERS VF 0.45 0.5 V 0.007 0.05 3.2 10 12 20 CT 37 pF THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Junction Capacitance VR=15V Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Forward Voltage Drop IF=1.0A Irm Maximum reverse leakage current VR=30V VR=30V, TJ=125°C VR=30V, TJ=150°C Output Capacitance Reverse Transfer Capacitance mA SWITCHING PARAMETERS Total Gate Charge VGS=4.5V, VDS=15V, ID=6.9A Gate Source Charge Gate Drain Charge Turn-On DelayTime VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Forward Transconductance VDS=5V, ID=5A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance VGS=0V, VDS=15V, f=1MHz RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6.9A m Ω VGS=4.5V, ID=6.0A VGS=2.5V, ID=5A Gate Threshold Voltage VDS=VGS ID=250µA On state drain current VGS=4.5V, VDS=5V µA Gate-Body leakage current VDS=0V, VGS= ±12V Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions STATIC PARAMETERS A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 3 : August 2005 Alpha & Omega Semiconductor, Ltd. |
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